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MGF4319G Datasheet Preview

MGF4319G Datasheet

Super Low Noise InGaAs HEMT

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MGF4319G pdf
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF431xG
Super Low Noise InGaAs HEMT
DESCRIPTION
The MGF431xG series super-low-noise HEMT(High Electron
Mobility Transistor) is designed for use in L to K band amplifiers.
The hermetically sealed metal-ceramic package assures
minimum parasitic losses, and has a configuration suitable for
microstrip circuits.
FEATURES
Low noise figure
@ f=12GHz
MGF4316G : NF min.=0.80dB (MAX.)
MGF4319G : NF min.=0.50dB (MAX.)
High associated gain
Gs=12.0 dB (MIN.)
@ f=12GHz
APPLICATION
L to K band low noise amplifiers.
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
Refer to Bias Procedure
OUTLINE DRAWING
GD-4
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )
Symbol
Parameter
Ratings Unit
VGDO Gate to drain voltage
-4 V
VGSO
ID
PT
Tch
Gate to source voltage
Drain current
Total power dissipation
Channel temperature
-4 V
60 mA
50 mW
125 °C
Tstg Storage temperature
-65 ~ +125 °C
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them.Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (i)placement of
substitutive, auxiliary circuits, (ii)use of non-flammable
material or (iii)prevention against any malfunction or mishap.
ELECTRICAL CHARACTERISTICS ( Ta=25°C )
Symbol
Parameter
Test conditions
Limits
Min. Typ.
Max
Unit
V(BR)GDO Gate to drain breakdown voltage IG= -10µA
-3 — — V
IGSS
Gate to source leakage current VGS= -2V, VDS=0V
— — 50 µA
IDSS Saturated drain current
VGS=0V, VDS=2V
15 — 60 mA
VGS (off)
Gate to Source cut-off voltage VDS=2V, ID=500µA
-0.1 — -1.5 V
gm Transconductance
VDS=2V, ID=10mA
— 75 — mS
Gs Associated gain
VDS=2V, ID=10mA, f=12GHz
12 13.5 —
dB
NFmin
Minimum noise figure
VDS=2V, ID=10mA, f=12GHz MGF4316G
MGF4319G
— 0.8
dB
— 0.5
Rth (ch-a) Thermal resistance
*1 Vf method
— 625 — ˚C/W
*1 : Channel to ambient
MITSUBISHI
ELECTRIC
as of Apr.'98



Mitsubishi
Mitsubishi

MGF4319G Datasheet Preview

MGF4319G Datasheet

Super Low Noise InGaAs HEMT

No Preview Available !

MGF4319G pdf
Typical Characteristics
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF431xG
Super Low Noise InGaAs HEMT
MITSUBISHI
ELECTRIC
as of Apr.'98


Part Number MGF4319G
Description Super Low Noise InGaAs HEMT
Maker Mitsubishi
Total Page 3 Pages
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