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MGFC36V7785A Datasheet Preview

MGFC36V7785A Datasheet

C band internally matched power GaAs FET

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< C band internally matched power GaAs FET >
MGFC36V7785A
7.7 – 8.5 GHz BAND / 4W
DESCRIPTION
The MGFC36V7785A is an internally impedance-matched
GaAs power FET especially designed for use in 7.7 – 8.5
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB=4W (TYP.) @f=7.7 – 8.5GHz
High power gain
GLP=8.0dB (TYP.) @f=7.7 – 8.5GHz
High power added efficiency
P.A.E.=29% (TYP.) @f=7.7 – 8.5GHz
Low distortion [item -51]
IM3=-45dBc (TYP.) @Po=25dBm S.C.L
APPLICATION
item 01 : 7.7 – 8.5 GHz band power amplifier
item 51 : 7.7 – 8.5 GHz band digital radio communication
OUTLINE DRAW ING Unit : millimeters
21.0 +/-0.3
(1)
0.6 +/-0.15
(2) (2)
R-1.6
(3)
10.7
17.0 +/-0.2
QUALITY
IG
12.0
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=1.2A Refer to Bias Procedure RG=100ohm
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
VGDO Gate to drain breakdown voltage
-15
VGSO Gate to source breakdown voltage
-15
ID Drain current
3.75
IGR Reverse gate current
-10
IGF Forward gate current
21
PT *1 Total power dissipation
25
Tch Cannel temperature
175
Tstg Storage temperature
*1 : Tc=25C
-65 to +175
Unit
V
V
A
mA
mA
W
C
C
GF-8
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
IDSS
Saturated drain current
VDS=3V,VGS=0V
gm Transconductance
VDS=3V,ID=1.1A
VGS(off) Gate to source cut-off voltage
VDS=3V,ID=10mA
P1dB
Output power at 1dB gain compression VDS=10V,ID(RF off)=1.2A
GLP
Linear Power Gain
f=7.7 – 8.5GHz
ID Drain current
P.A.E.
Power added efficiency
IM3 *2
3rd order IM distortion
Rth(ch-c) *3 Thermal resistance
delta Vf method
*2 :item -51 ,2 tone test,Po=25dBm Single Carrier Level ,f=8.5GHz,delta f=10MHz
*3 :Channel-case
Min.
-
-
-
35
7
-
-
-42
-
Limits
Typ.
-
1
-
36.5
8
-
29
-45
5
Max.
3.75
-
-4.5
-
-
1.8
-
-
6
Unit
A
S
V
dBm
dB
A
%
dBc
C/W
Publication Date : Apr., 2011
1



Mitsubishi
Mitsubishi

MGFC36V7785A Datasheet Preview

MGFC36V7785A Datasheet

C band internally matched power GaAs FET

No Preview Available !

MGFC36V7785A pdf
< C band internally matched power GaAs FET >
MGFC36V7785A
7.7 – 8.5 GHz BAND / 4W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any
third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are subject
to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It
is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized
Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product
listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi
Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these
inaccuracies or errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means,
including the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).
•When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before making
a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or
system that is used under circumstances in which human life is potentially at stake. Please contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when
considering the use of a product contained herein for any specific purposes, such as apparatus or systems
for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or
in part these materials.
•If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other than
the approved destination.
Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
destination is prohibited.
•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor
for further details on these materials or the products contained therein.
© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Apr., 2011
2


Part Number MGFC36V7785A
Description C band internally matched power GaAs FET
Maker Mitsubishi
Total Page 2 Pages
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