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Mitsubishi Electric
Mitsubishi Electric

M5L2764K Datasheet Preview

M5L2764K Datasheet

64K-Bit Erasable and Electrically Reprogrammable ROM

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M5L2764K pdf
MITSUBISHI LSls
MSL2764K, -2
65536-BIT (8192-WORD BY 8-BIT)
ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
DESCRIPTION
The Mitsubishi M5L2764 K is a high-speed 65536-bit
ultraviolet erasable and electrically reprogrammable read
only memory. It is suitable for microprocessor program-
ming applications where rapid turn-around is required.
The M5L2764K is fabricated by N-channel double poly-
silicon gate technology and is available in a 28-pin DI L
package with a transparent lid.
FEATURES
• 8192 Word x 8-bit Organization
• Access Time
M5L2764K-2 200 ns (Max)
M5L2764K 250 ns (Max)
• Two Line Control OE, CE
• Low Power Current (Icc) Active ..... 150 rnA (Max)
Standby ... 35 rnA (Max)
• Single 5V Power Supply
• 3-State Output Buffer
• Input and Output TTL-Compatible in Read and Pro-
gram Mode
• Standard 28-pin DI L Package
• Single Location Programming with One 50 ms Pulse
• Fast programming algorithm
• Interchangeable with INTE L 2764
PIN CONFIGURATION (TOP VIEW)
(IV, 21V) Vpp
ADDRESS
INPUTS
iIN~~Jtt
Do
0I
OUTPUTS 0,
(OV) GND
Vee (IV)
27 ~ PGM m~UGTRAM
NC
IADDRESS
J INPUTS
DUTPUT
ENABLE INPUT
ADDRESS INPUT
CHIP ENABLE
INPUT
DATA
INPUTS
!OUTPUTS
Outline 28K1
NC : NO CONNECTION
BLOCK DIAGRAM
ADDRESS
INPUTS
CHIP ENABLE INPUT
OUTPUT ENABLE INPUT
PROGRAM INPUT
(SV)
(SV, 21V)
(OV)
~-----------~
X-DECODER
I I8192 WORD _
X a-BIT
ROM
I
V-DECODER
V-GATING
CI RCUIT
I
)------<1 CHIP EN~~RLEuIT I---~
1)------<1 OUTPUT c~~~~~i I---~
)------<>1 PROGRA~~~~~T
SENSE
AMPLIFIERS
AND OUTPUT
BUFFERS
I
• MITSUBISHI
"ELECTRIC
6-3



Mitsubishi Electric
Mitsubishi Electric

M5L2764K Datasheet Preview

M5L2764K Datasheet

64K-Bit Erasable and Electrically Reprogrammable ROM

No Preview Available !

M5L2764K pdf
MITSUBISHI LSls
MSL2764K, -2
6SS36-BIT (8192-WORD BY 8-BIT)
ERASABLE AND ELECTRICAl.LY REPROGRAMMABLE ROM
FUNCTION
Read
Set the CE and OE terminals to the read mode (low level).
Low level input to CE and OE and address signals to the ad-
dress inputs (Ao - A 12) make the data contents of the
designated address location available at the data input/output
(Do - 07). When the CE or DE signal is high, data input/output
are in a floating state.
When the CE signal is high, the device is in the standby
mode or power-down mode.
In the read mode Vpp must be at Vee level.
Programming
(Fast programming algorithm)
First set Vcc=6V, Vpp=21V and then set an address to first
address to be programmed. After applying 1 ms program
pulse (PGM) to the address, verify is performed. If the output
data of that address is not verified correctly, apply one more 1
ms program pulse. The programmer continues 1 ms pulse-
then-verify routines until the device verify correctly or fifteen
of these pulse-then-verify routines have been completed. The
programmer also maintains its total number of 1 ms pulses ap-
plied to that address in register X. And then applied a program
pulse 4 times of register X value long as an overprogram pulse.
When the programming procedure above is finished, step to
the next address and repeat this procedure till last address to
be programmed. (See P.6-9)
(Conventional programming algorithm)
The device enters the programming mode when 21V is sup-
crplied to the Vpp power supply input and is at low level. A
location is designated by address signals (Ao - A 12), and the
data to be programmed must be applied at 8-bits in parallel to
the data inputs (00 - 0 7), A program pulse to the PGMat this
state will effect programming. Only one programming pulse is
required, but its width must satisfy the condition 45
ms;::;;tpw ;::;;55 ms.
Erase
Erase is effected by exposure to ultraviolet light with a
wavelength of 2537A at an intensity of appoximately
15WS/cm2• Sunlight and fluorescent light may contain
ultraviolet light sufficient to erase the programmed informa-
tion. For any operation in the read mode, the transparent lid
should be covered with opaque tape.
MODE SELECTION
~Mode
Read
Standby
Program
Program verify
Program inhibit
*: X can be either V,L or V,H
CE(20)
V'L
V,H
V,L
V,L
V,H
OE(22)
V,L
X*
X*
V,L
X*
PGM (27)
V,H
X*
V,L
V,H
X*
Vpp( 1)
Vee
Vee
Vpp
Vpp
Vpp
ABSOLUTE MAXIMUM RATINGS (Note 1)
Symbol
Parameter
Limits
Unit
Topr
Temperature under bias
-10-80
·C
Tstg
Storage temperature
-65-125
·C
VI1 All input or output voltage (Note 2!
-0.6-7
V
V,2 V pp supply voltage during programming (Note 21
-0.6-26.5
V
Note 1: Stresses above those listed may cause p~rmanent damage to the device. This is a stress rating only and
functional operation of the device at these or at any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods affects device reliability.
2: With respect to Ground.
Vee(28)
vee
Vee
Vee
Vee
Vee
Outputs
(11-13.15--19)
Data out
Floating
Data in
Data out
Floating
• MITSUBISHI
6-4 ~ELECTRIC


Part Number M5L2764K
Description 64K-Bit Erasable and Electrically Reprogrammable ROM
Maker Mitsubishi Electric
Total Page 7 Pages
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