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Mitsubishi Electric
Mitsubishi Electric

MGF1952A Datasheet Preview

MGF1952A Datasheet

Microwave Power MES FET

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MGF1952A pdf
June /2004
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF1952A
Microwave Power MES FET (Leadless Ceramic Package)
DESCRIPTION
The MGF1952A is designed for use in S to Ku band power
amplifiers.
The lead-less ceramic package assures minimum parasitic losses.
Outline Drawing
FEATURES
High gain and High P1dB
Glp=7.0dB , P1dB=17dBm (Typ.) @ f=12GHz
APPLICATION
S to Ku band power Amplifiers
QUALITY GRADE
GG
ORDERING INFORMATION
Tape & reel 3000pcs./reel
Fig.1
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ABSOLUTE MAXIMUM RATINGS
Symbol
VGDO
VGSO
ID
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
PT Total power dissipation
Tch Channel temperature
Tstg Storage temperature
(Ta=25°C )
Ratings
-8
-8
240
600
125
-65 to +125
Unit
V
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS
Synbol
Parameter
(Ta=25°C )
Test conditions
V(BR)GDO
IDSS
VGS(off)
P1dB
Glp
Gate to drain breakdown voltage
Saturated drain current
Gate to source cut-off voltage
Output Power at 1dB gain
Compression
Linear Power Gain
Ig=-60µA
VGS=0V,VDS=3V
VDS=3V,ID=600µA
VDS=3V,ID=60mA
f=12GHz
VDS=3V,ID=60mA
f=12GHz,Pin=-5dBm
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
MIN.
-8
65
-0.3
15
5
Limits
TYP.
-15
120
-1.4
17
7
MAX
--
240
-3.5
--
--
Unit
V
mA
V
dBm
dB
MITSUBISHI
(1/5)
June /2004



Mitsubishi Electric
Mitsubishi Electric

MGF1952A Datasheet Preview

MGF1952A Datasheet

Microwave Power MES FET

No Preview Available !

MGF1952A pdf
June /2004
Fig.1
Top
2.
RWUYW
‰…ˆŒ TWUXW
D2
4AA
Ž3.
b
Œ1.
2.
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF1952A
Microwave Power MES FET (Leadless Ceramic Package)
Side
Unit : mm
Bottom
‡…‰‡ç‡…ˆ
‡…‡ç‡…ˆ
‰„ˆ…‡‰€
1.
‰„©‡…‰ŽŒ
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2.
2.
3.
‡…‡Œ
‹„‡…ŒŒç
‡…Š‡€
‰…Š‡€
from "A" side view
Square shape electrode is Drain
1. Gate
2. Source
3. Drain
MITSUBISHI
(2/5)
June /2004


Part Number MGF1952A
Description Microwave Power MES FET
Maker Mitsubishi Electric
Total Page 5 Pages
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