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Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

MGFS38E2325-01 Datasheet Preview

MGFS38E2325-01 Datasheet

2.3 - 2.5GHz HBT MMIC MODULE

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MGFS38E2325-01 pdf
Specifications are subject to change without notice.
DESCRIPTION
MGFS38E2325 is a GaAs RF amplifier designed
for WiMAX CPE.
FEATURES
InGaP HBT Device
5V Operation
28.5dBm Linear Output Power (64QAM, EVM=2.5%)
36dB Linear Gain
Integrated Output Power Detector
Integrated 1-bit Step Attenuator
Surface Mount Package
RoHS Compliant Package
APPLICATIONS
IEEE802.16-2004
IEEE802.16e-2005
FUNCTIONAL BLOCK DIAGRAM
Mitsubishi Semiconductors
MGFS38E2325-01
2.3 - 2.5GHz HBT MMIC MODULE
Outline Drawing
4.0
DIM in mm
1.0
10 9 8 7 6
GND
12 345
X-ray Top View
1 Pin
2 Vc1, Vcb
3 Vc2
4 Vc3
5 Vc4
6 Pout
7 Vdet
8 GND
9 Vref
10 Vcont
Pin
Vcont
(0V/3.3V)
Vc1,Vcb
(5V)
www.DataSheet.net/
Gain control
Pout
Bias Circuit
Detector Circuit
Vc2(5V) Vref(2.85V) Vc3(5V) Vc4(5V)
Power
Detector
Vdet
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always
the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of
substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
MITSUBISHI ELECTRIC CORPORATION
(1/21)
Rev. 1.1
Sep. -2010
Datasheet pdf - http://www.DataSheet4U.co.kr/



Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

MGFS38E2325-01 Datasheet Preview

MGFS38E2325-01 Datasheet

2.3 - 2.5GHz HBT MMIC MODULE

No Preview Available !

MGFS38E2325-01 pdf
Specifications are subject to change without notice.
Mitsubishi Semiconductors
MGFS38E2325-01
2.3 - 2.5GHz HBT MMIC MODULE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Vc1,Vc2,Vc3,
Vc4,Vcb
Vref
Vcont
Ic1+Icb
Ic2
Ic3
Ic4
Pin
Tc(op)
Tstg
-
Collector Supply Voltage
Reference Voltage
ATT Control Voltage
Operation Current
Input Power
Operation Temperature
Storage Temperature
Duty Cycle
Conditions
-
-
-
-
-
Pout28.5dBm
-
-
Value
Min. Max.
-8
-3
- 3.5
100
100
300
1000
-3
-40 +85
-40 +125
- 50
Unit
V
V
V
mA
mA
mA
mA
dBm
C
C
%
*NOTE : Ta=25C unless otherwise noted, Zin=Zout=50
Each maximum rating is guaranteed independently.
Please take care that MGFS38E2325 is operated under these conditions at the worst
case on your terminal.
ELECTRICAL CHARACTERISTICS
Symbol Parameter
Test Conditions
f
Gp
EVM
Vdet
Frequency
Gain
EVM
Power Detector Voltage
www.DataSheet.net/
Vc1=Vc2=Vc3=Vc4=5V,
Vref=2.85V, Vcont=0V
Pout=28.5dBm
64QAM OFDM Modulation
Duty Cycle <= 50%
ATT Control Gain Step
Ict Operating Current
*NOTE : Ta=25C unless otherwise noted, Zin=Zout=50
**ATT=Gain(@Vcont=0V)Gain(@Vcont=3.3V)
Min
2300
Value
Typ Max
2500
36.0
2.5
Unit
MHz
dB
%
1.5 V
25 dB
950 mA
MOISTURE SENSITIVITY LEVEL : LEVEL3
MITSUBISHI ELECTRIC CORPORATION
(2/21)
Rev. 1.1
Sep. -2010
Datasheet pdf - http://www.DataSheet4U.co.kr/


Part Number MGFS38E2325-01
Description 2.3 - 2.5GHz HBT MMIC MODULE
Maker Mitsubishi Electric Semiconductor
Total Page 21 Pages
PDF Download
MGFS38E2325-01 pdf
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