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Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

RA35H1516M-01 Datasheet Preview

RA35H1516M-01 Datasheet

154-162MHz 40W 12.5V MOBILE RADIO

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RA35H1516M-01 pdf
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA35H1516M
154-162MHz 40W 12.5V MOBILE RADIO
DESCRIPTION
The RA35H1516M is a 40-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 154- to
162-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 4.5V (typical) and 5V (maximum). At
VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• Pout>40W, ηT>50% @ VDD=12.5V, VGG=5V, Pin=50mW
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
BLOCK DIAGRAM
2
3
14
5
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
ORDERING INFORMATION:
ORDER NUMBER
RA35H1516M-E01
RA35H1516M-01
(Japan - packed without desiccator)
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA35H1516M
MITSUBISHI ELECTRIC
1/8
15 April 2003



Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

RA35H1516M-01 Datasheet Preview

RA35H1516M-01 Datasheet

154-162MHz 40W 12.5V MOBILE RADIO

No Preview Available !

RA35H1516M-01 pdf
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA35H1516M
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
VDD Drain Voltage
VGG<5V
VGG Gate Voltage
VDD<12.5V, Pin=0mW
Pin Input Power
Pout Output Power
f=154-162MHz,
ZG=ZL=50
Tcase(OP) Operation Case Temperature Range
Tstg Storage Temperature Range
The above parameters are independently guaranteed.
RATING
17
6
100
50
-30 to +110
-40 to +110
UNIT
V
V
mW
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX UNIT
f Frequency Range
Pout Output Power
ηT Total Efficiency
2fo 2nd Harmonic
ρin Input VSWR
VDD=12.5V
VGG=5V
Pin=50mW
IGG Gate Current
— Stability
VDD=8.0-15.2V, Pin=25-70mW,
Pout<50W (VGG control), Load VSWR=3:1
Load VSWR Tolerance
VDD=15.2V, Pin=50mW, Pout=40W (VGG control),
Load VSWR=20:1
154 162
40
50
-50
3:1
1
No parasitic oscillation
MHz
W
%
dBc
mA
No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
RA35H1516M
MITSUBISHI ELECTRIC
2/8
15 April 2003


Part Number RA35H1516M-01
Description 154-162MHz 40W 12.5V MOBILE RADIO
Maker Mitsubishi Electric Semiconductor
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