http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





Mos-Tech Semiconductor
Mos-Tech Semiconductor

MT2301 Datasheet Preview

MT2301 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

MT2301 pdf
MOS-TECH Semiconductor Co.,LTD
MT2301
Single P-Channel Power MOSFET
General Description
This P-Channel Power MOSFET is pro duced
using MOS-TECH Semiconductor’s advanced
PowerTrench process that has b een especially tailored
to minimize the on-state r esistance and yet maintain
low gate charge for superior switching performance.
These devices a re well suit ed for portable electronics
applications: load s witching and power management,
battery charging circuits and DC/DC conversion.
D
Features
3.3 A, –20 V. RDS(ON) = 0.072 @ VGS = –4.5 V
RDS(ON) = 0.096@ VGS = –2.5 V
Low gate charge (3.6 nC typical)
High performance trench technology for extremely
low RDS(ON)
SuperSOTTM -23 provides low RDS(ON) and 30%
higher power handling capability than SOT23 in
the same footprint
D
S
SOT -23 TM
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
010X
MT2301
7’’
GS
Ratings
–20
±12
3.3
–10
0.5
0.46
–55 to +150
250
75
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
©2010 MOS-TECH Semiconductor Corporation
www.mtsemi.com
Rev.D



Mos-Tech Semiconductor
Mos-Tech Semiconductor

MT2301 Datasheet Preview

MT2301 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

MT2301 pdf
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol
Parameter
Conditions
OFF CHARACTERISTICS
Min Typ Max Units
BVDSS
BVDSS/TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
IGSSF Gate - Body Leakage, Forward
IGSSR Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
VGS = 0 V, ID = -250 µA
ID = -250 µA, Referenced to 25 oC
-20
-16
V
mV /o C
VDS = -16 V, VGS = 0 V
-1 µA
TJ = 55°C
-10 µA
VGS = 8 V, VDS = 0 V
VGS = -8 V, VDS = 0 V
100 nA
-100 nA
VGS(th)
VGS(th)/TJ
RDS(ON)
Gate Threshold Voltage
Gate Threshold Voltage Temp. Coefficient
Static Drain-Source On-Resistance
ID(ON) On-State Drain Current
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
VDS = VGS, ID = -250 µA
ID = -250 µA, Referenced to 25 oC
VGS = -4.5 V, ID = -1.3 A
VGS = -2.5 V, I D = -1.1 A
VGS = -4.5 V, VDS = -5 V
TJ =125°C
VDS = -4.5 V, ID = -2 A
-0.8 -1.5 V
3 mV /oC
0.072 0.08
0.12 0.15
0.096 0.15
-3.3 A
4S
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
330 pF
80 pF
35 pF
tD(on) Turn - On Delay Time
tr Turn - On Rise Time
VDD = -5 V, ID = -0.5 A,
VGS = -4.5 V, RGEN = 6
tD(off) Turn - Off Delay Time
tf Turn - Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS = -10 V, ID = - 2 A,
VGS = -4.5 V
Qgd Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
7 15
12 22
16 26
5 12
3.6 5
0.8
0.7
ns
ns
ns
ns
nC
nC
nC
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage
VGS = 0 V, IS = -0.42 A (Note)
-0.42
-0.7 -1.2
A
V
Note:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the s older mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.
a. 250oC/W when mounted on
a 0.02 in2 pad of 2oz Cu.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
b. 270oC/W when mounted on
a 0.001 in2 pad of 2oz Cu.
Rev.D


Part Number MT2301
Description P-Channel Enhancement Mode Field Effect Transistor
Maker Mos-Tech Semiconductor
Total Page 8 Pages
PDF Download
MT2301 pdf
Download PDF File
MT2301 pdf
View for Mobile






Related Datasheet

1 MT2300 N-Channel Power MOSFET MOS-TECH
MOS-TECH
MT2300 pdf
2 MT2301 P-Channel Enhancement Mode MOSFET MATRIX MICROTECH
MATRIX MICROTECH
MT2301 pdf
3 MT2301 P-Channel Enhancement Mode Field Effect Transistor Mostech
Mostech
MT2301 pdf
4 MT2301 P-Channel Enhancement Mode Field Effect Transistor Mos-Tech Semiconductor
Mos-Tech Semiconductor
MT2301 pdf
5 MT2302 N-Channel Power MOSFET MOS-TECH
MOS-TECH
MT2302 pdf
6 MT2305 P-Channel Power MOSFET MOS-TECH
MOS-TECH
MT2305 pdf
7 MT2306 N-Channel Power MOSFET MOS-TECH
MOS-TECH
MT2306 pdf
8 MT2307 P-Channel Power MOSFET MOS-TECH
MOS-TECH
MT2307 pdf
9 MT230DW01-V1 LCD Module INNOLUX
INNOLUX
MT230DW01-V1 pdf




Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components