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Motorola Electronic Components Datasheet

MC74HC30 Datasheet

8-Input NAND Gate High-Performance Silicon-Gate CMOS

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
8-Input NAND Gate
High–Performance Silicon–Gate CMOS
The MC74HC30 is identical in pinout to the LS30. The device inputs are
compatible with standard CMOS outputs; with pullup resistors, they are
compatible with LSTTL outputs.
Output Drive Capability: 10 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2 to 6 V
Low Input Current: 1 µA
High Noise Immunity Characteristic of CMOS Devices
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
Chip Complexity: 32 FETs or 8 Equivalent Gates
LOGIC DIAGRAM
A
B
C
D
E
F
G
H
1
2
3
4
5
6
11
12
8Y
PINS 9, 10, 13 = NO CONNECTION
Y = ABCDEFGH
PIN 14 = VCC
PIN 7 = GND
MC74HC30
14
1
14
1
N SUFFIX
PLASTIC PACKAGE
CASE 646–06
D SUFFIX
SOIC PACKAGE
CASE 751A–03
ORDERING INFORMATION
MC74HCXXN
MC74HCXXD
Plastic
SOIC
PIN ASSIGNMENT
A1
B2
C3
D4
E5
F6
GND 7
14 VCC
13 NC
12 H
11 G
10 NC
9 NC
8Y
NC = NO CONNECTION
FUNCTION TABLE
Inputs A through H
All inputs H
One or more inputs L
Output
Y
L
H
10/95
© Motorola, Inc. 1995
1 REV 6


Motorola Electronic Components Datasheet

MC74HC30 Datasheet

8-Input NAND Gate High-Performance Silicon-Gate CMOS

No Preview Available !

MC74HC30 pdf
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMC74HC30
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymbol
Parameter
Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVin
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVout
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIin
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIout
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎICC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPD
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
– 1.5 to VCC + 1.5
– 0.5 to VCC + 0.5
± 20
V
V
mA
DC Output Current, per Pin
± 25 mA
DC Supply Current, VCC and GND Pins
Power Dissipation in Still Air
Plastic DIP†
SOIC Package†
± 50
750
500
mA
mW
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTstg Storage Temperature
– 65 to + 150
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTL Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
260
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Maximum Ratings are those values beyond which damage to the device may occur.
_C
_C
Functional operation should be restricted to the Recommended Operating Conditions.
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance cir-
cuit. For proper operation, Vin and
v vVout should be constrained to the
range GND (Vin or Vout) VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
†Derating — Plastic DIP: – 10 mW/_ C from 65_ to 125_ C
SOIC Package: – 7 mW/_ C from 65_ to 125_ C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎFor high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRECOMMENDED OPERATING CONDITIONS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymbol
Parameter
Min Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCC DC Supply Voltage (Referenced to GND)
2.0 6.0 V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVin, Vout DC Input Voltage, Output Voltage (Referenced to GND) 0 VCC V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTA Operating Temperature, All Package Types
– 55 + 125 _ C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtr, tf Input Rise and Fall Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(Figure 1)
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
0
0
0
1000
500
400
ns
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎGuaranteed Limit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymbol
Parameter
Test Conditions
VCC
V
– 55 to
25_ C
v 85_C v 125_C
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVIH Minimum High–Level Input
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVoltage
vVout = 0.1 V or VCC – 0.1 V
|Iout| 20 µA
2.0 1.5 1.5 1.5
4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVIL Maximum Low–Level Input
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVoltage
vVout = 0.1 V or VCC – 0.1 V
|Iout| 20 µA
2.0 0.3 0.3 0.3 V
4.5 0.9 0.9 0.9
6.0 1.2 1.2 1.2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVOH
Minimum High–Level Output
Voltage
vVin = VIH or VIL
|Iout| 20 µA
2.0 1.9 1.9 1.9 V
4.5 4.4 4.4 4.4
6.0 5.9 5.9 5.9
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎvVin=VIHorVIL |Iout| 4.0mA 4.5
3.98
3.84
3.70
v|Iout| 5.2 mA 6.0
5.48
5.34
5.20
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVOL
Maximum Low–Level Output
Voltage
vVin = VIH or VIL
|Iout| 20 µA
2.0 0.1 0.1 0.1 V
4.5 0.1 0.1 0.1
6.0 0.1 0.1 0.1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎvVin=VIHorVIL |Iout| 4.0mA 4.5
0.26
0.33
0.40
v|Iout| 5.2 mA 6.0
0.26
0.33
0.40
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIin Maximum Input Leakage Current Vin = VCC or GND
6.0 ± 0.1 ± 1.0 ± 1.0 µA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎICC MaximumQuiescent Supply
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCurrent (per Package)
Vin = VCC or GND
Iout = 0 µA
6.0 2
20 40 µA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎNOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
MOTOROLA
2 High–Speed CMOS Logic Data
DL129 — Rev 6


Part Number MC74HC30
Description 8-Input NAND Gate High-Performance Silicon-Gate CMOS
Maker Motorola
Total Page 5 Pages
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