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Motorola Electronic Components Datasheet

MD8003 Datasheet

DUAL AMPLIFIER TRANSISTOR

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MD8003 pdf
MD8001
MD8002
MD8003
CASE 654-07, STYLE 1
DUAL
AMPLIFIER TRANSISTOR
NPN SILICON
Refer to 2N2920 for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
MD8001
MD8002
MD8003
Collector Current Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
Total Device Dissipation
@ Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
ic
PD
Pd
TJ' Tstg
Value
Unit
Vdc
40
50
60
30 mAdc
Both Die
One Die Equal Power
575
3.29
625 mW
3.57
mW/°C
1.8
10.3
2.5
14.3
-65 to +200
Watts
mW/°C
•c
THERMAL CHARACTERISTICS
Characteristic
Symbol
One Die
Max
Both Die
Equal Power
Max
Unit
Thermal Resistance,
Junction to Case
P-0JC
97
70 °C/W
Thermal Resistance,
Junction to Ambient
R&JAd)
304
280 °c/w
Coupling Factor
Junction to Junction to
Ambient
Case
84 44
%
(1) R&ja is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
dC = 10 mAdc, Ib = 0)
Collector Cutoff Current
(Vcb = 40 Vdc, Ie = 0)
Emitter Cutoff Current
(Veb = 4.0 Vdc, Ic = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 1-0 mAdc, VC e = 10 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product(2)
dC = 5.0 mAdc, Vce = 10 Vdc, f = 100 MHz)
Output Capacitance
(Vcb = 10 Vdc, Ie = 0, f = 100 kHz)
Input Capacitance
(Vbe = 2.0 Vdc, Ic = 0, f = 100 kHz)
MATCHING CHARACTERISTICS
Base-Emitter Voltage Differential
dC = 1.0 mAdc, Vce = 10 Vdc)
(2) Pulse Test: Pulse Width « 300 fis, Duty Cycle * 2.0%.
MD8001
MD8002
MD8003
v (BR)CEO
'CBO
lEBO
40
50
60
-
"FE 100
*T
C bo
Cibo
IVBE1-VBE2I
200
260
2.6
2.3
Vdc
-
50 nAdc
50 nAdc
——
MHz
PF
pF
15 mVdc
5-86


Part Number MD8003
Description DUAL AMPLIFIER TRANSISTOR
Maker Motorola
Total Page 1 Pages
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