http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Motorola Electronic Components Datasheet

MGP20N60U Datasheet

Insulated Gate Bipolar Transistor

No Preview Available !

MGP20N60U pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Product Preview
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. It also provides fast switching charac-
teristics and results in efficient operation at high frequencies.
Industry Standard TO–220 Package
High Speed Eoff: 67 mJ/A typical at 125°C
Low On–Voltage – 1.7 V typical at 10 A, 125°C
Robust High Voltage Termination
ESD Protection Gate–Emitter Zener Diodes
C
Order this document
by MGP20N60U/D
MGP20N60U
IGBT IN TO–220
20 A @ 90°C
31 A @ 25°C
600 VOLTS
VERY LOW
ON–VOLTAGE
G
E
G
C
E
CASE 221A–09, Style 9
TO–220AB
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 M)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCES
VCGR
VGE
IC25
IC90
ICM
PD
600
600
± 20
31
20
40
142
0.89
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to 150
Thermal Resistance — Junction to Case – IGBT
— Junction to Ambient
RθJC
RθJA
1.12
65
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 5 seconds
TL 200
Mounting Torque, 6–32 or M3 screw
10 lbfSin (1.13 NSm)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/°C
°C
°C/W
°C
© MMoototororloa,laIncIG. 1B99T7 Device Data
1


Motorola Electronic Components Datasheet

MGP20N60U Datasheet

Insulated Gate Bipolar Transistor

No Preview Available !

MGP20N60U pdf
MGP20N60U
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 25 µAdc)
Temperature Coefficient (Positive)
V(BR)CES
600
870
Vdc
— mV/°C
Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc)
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc)
(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc)
V(BR)ECS
ICES
IGES
15
— — Vdc
µAdc
— 10
— 200
— 50 µAdc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 5.0 Adc)
(VGE = 15 Vdc, IC = 5.0 Adc, TJ = 125°C)
(VGE = 15 Vdc, IC = 10 Adc, TJ = 125°C)
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
VCE(on)
Vdc
— 1.4 1.7
— 1.3 —
— 1.7 2.0
VGE(th)
Vdc
3.0 5.0 7.0
— 10 — mV/°C
Forward Transconductance (VCE = 10 Vdc, IC = 10 Adc)
gfe — 7.0 — Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VCE = 25 Vdc, VGE = 0 Vdc,
f = 1.0 MHz)
Cies
Coes
Cres
— 1060 —
— 99 —
— 15 —
pF
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Gate Charge
(VCC = 360 Vdc, IC = 10 Adc,
VGE = 15 Vdc, L = 300 mH,
RG = 20 Ω, TJ = 25°C)
Energy losses include “tail”
(VCC = 360 Vdc, IC = 10 Adc,
VGE = 15 Vdc, L = 300 mH,
RG = 20 Ω, TJ = 125°C)
Energy losses include “tail”
(VCC = 360 Vdc, IC = 10 Adc,
VGE = 15 Vdc)
td(on)
tr
td(off)
tf
Eoff
td(on)
tr
td(off)
tf
Eoff
QT
Q1
Q2
— 43 — ns
— 45 —
— 144 —
— 175 —
— 340 —
mJ
— 43 — ns
— 56 —
— 235 —
— 220 —
— 625 —
mJ
— 57 — nC
— 12 —
— 25 —
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25from package to emitter bond pad)
LE
nH
— 7.5 —
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
2 Motorola IGBT Device Data


Part Number MGP20N60U
Description Insulated Gate Bipolar Transistor
Maker Motorola
Total Page 6 Pages
PDF Download
MGP20N60U pdf
Download PDF File


Buy Electronic Components




Related Datasheet

1 MGP20N60U Insulated Gate Bipolar Transistor Motorola
Motorola
MGP20N60U pdf
2 MGP20N60U Insulated Gate Bipolar Transistor ON
ON
MGP20N60U pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components