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Motorola Electronic Components Datasheet

MGSF1N02ELT1 Datasheet

N-CHANNEL LOGIC LEVEL ENHANCEMENT-MODE TMOS MOSFET

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MGSF1N02ELT1 pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MGSF1N02ELT1/D
Low rDS(on) Small-Signal MOSFETs
TMOS Single N-Channel
Field Effect Transistor
Part of the GreenLinePortfolio of devices with energy–
conserving traits.
These miniature surface mount MOSFETs utilize Motorola’s
High Cell Density, HDTMOS process. Low rDS(on) assures
minimal power loss and conserves energy, making this device
ideal for use in space sensitive power management circuitry.
Typical applications are dc–dc converters and power manage-
ment in portable and battery–powered products such as
computers, printers, PCMCIA cards, cellular and cordless
telephones.
Low rDS(on) Provides Higher Efficiency and Extends Battery
Life
1
GATE
Miniature SOT–23 Surface Mount Package Saves Board Space
3 DRAIN
2 SOURCE
MGSF1N02ELT1
Motorola Preferred Device
N–CHANNEL
LOGIC LEVEL
ENHANCEMENT–MODE
TMOS MOSFET
3
1
2
CASE 318–08, Style 21
SOT–23 (TO–236AB)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C
Drain Current — Pulsed Drain Current (tp 10 µs)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature Range
Thermal Resistance — Junction–to–Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 10 seconds
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MGSF1N02ELT1
78mm embossed tape
3000
MGSF1N02ELT3
138mm embossed tape
10,000
GreenLine is a trademark of Motorola, Inc.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Symbol
VDSS
VGS
ID
IDM
PD
TJ, Tstg
RθJA
TL
Value
20
± 8.0
750
2000
400
– 55 to 150
300
260
Unit
Vdc
Vdc
mA
mW
°C
°C/W
°C
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa, SInmc. 1a9ll98Signal Transistors, FETs and Diodes Device Data
1


Motorola Electronic Components Datasheet

MGSF1N02ELT1 Datasheet

N-CHANNEL LOGIC LEVEL ENHANCEMENT-MODE TMOS MOSFET

No Preview Available !

MGSF1N02ELT1 pdf
MGSF1N02ELT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 µA)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
Gate–Source Leakage Current (VGS = ± 8.0 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
IGSS
Gate–Source Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
VGS(th)
Static Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 1.0 A)
(VGS = 2.5 Vdc, ID = 0.75 A)
rDS(on)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 5.0 Vdc, VGS = 0 V, f = 1.0 Mhz)
(VDS = 5.0 Vdc, VGS = 0 V, f = 1.0 Mhz)
Ciss
Coss
Transfer Capacitance
(VDG = 5.0 Vdc, VGS = 0 V, f = 1.0 Mhz)
SWITCHING CHARACTERISTICS(2)
Crss
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 5 Vdc, ID = 1.0 Adc,
RL = 5 , RG = 6 )
td(on)
tr
td(off)
tf
Total Gate Charge
(VDS = 16 Vdc, ID = 1.2 Adc,
VGS = 4.0 Vdc)
QT
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
Forward Voltage(2) (VGS = 0 Vdc, IS = 0.6 Adc)
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
IS
ISM
VSD
Min
20
0.5
Typ Max Unit
— — Vdc
µAdc
— 1.0
— 10
± 0.1
µAdc
— 1.0 Vdc
Ohms
— 0.085
— 0.115
160 —
130 —
60 —
pF
6.0
26
117
105
6500
ns
pC
— 0.6 A
— 0.75
— 1.2 V
TYPICAL ELECTRICAL CHARACTERISTICS
2.5
2
TJ = 150°C
1.5
25°C
– 55°C
1
0.5
0
0.5 0.8 1.1 1.4 1.7
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
2.0
2
2.5 V
1.8 2.25 V 1.75 V
1.6 2.0 V
1.4
1.2
1.5 V
1
0.8
0.6
0.4 VGS = 1.25 V
0.2
0
0 0.5 1 1.5 2 2.5
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. On–Region Characteristics
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Part Number MGSF1N02ELT1
Description N-CHANNEL LOGIC LEVEL ENHANCEMENT-MODE TMOS MOSFET
Maker Motorola
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