http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Motorola Electronic Components Datasheet

MGSF3442XT1 Datasheet

N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

No Preview Available !

MGSF3442XT1 pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MGSF3442XT1/D
Preliminary Information
MGSF3442XT1
Motorola Preferred Device
Low rDS(on) Small-Signal MOSFETs
TMOS Single N-Channel
Field Effect Transistors
Part of the GreenLinePortfolio of devices with energy–
conserving traits.
These miniature surface mount MOSFETs utilize Motorola’s High
Cell Density, HDTMOS process. Low rDS(on) assures minimal
power loss and conserves energy, making this device ideal for use
in small power management circuitry. Typical applications are
dc–dc converters, power management in portable and battery–
powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
Low rDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature TSOP 6 Surface Mount Package Saves Board Space
Visit our Web Site at http://www.mot–sps.com/ospd
1256
DRAIN
3
GATE
SOURCE
4
N–CHANNEL
ENHANCEMENT–MODE
TMOS MOSFET
rDS(on) = 58 m(TYP)
DD
S
D
DG
CASE 318G–02, Style 1
TSOP 6 PLASTIC
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C
Drain Current — Pulsed Drain Current (tp 10 µs)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature Range
Thermal Resistance — Junction–to–Ambient
Maximum Lead Temperature for Soldering Purposes, for 10 seconds
Symbol
VDSS
VGS
ID
IDM
PD
TJ, Tstg
RθJA
TL
Value
20
± 8.0
1.7
20
400
– 55 to 150
300
260
Unit
Vdc
Vdc
A
mW
°C
°C/W
°C
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MGSF3442XT1
78 mm embossed tape
3000
MGSF3442XT3
138 mm embossed tape
10,000
GreenLine is a trademark of Motorola, Inc.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa, SInmc. 1a9ll97Signal Transistors, FETs and Diodes Device Data
1


Motorola Electronic Components Datasheet

MGSF3442XT1 Datasheet

N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

No Preview Available !

MGSF3442XT1 pdf
MGSF3442XT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 µA)
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 70°C)
Gate–Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Static Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 1.7 A)
(VGS = 2.5 Vdc, ID = 1.3 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 5.0 V)
(VDS = 5.0 V)
Transfer Capacitance
SWITCHING CHARACTERISTICS(2)
(VDG = 5.0 V)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
(VDD = 10 Vdc, ID = 1.0 A,
VGEN = 10 V, RL = 10 )
Fall Time
Gate Charge
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
Forward Voltage(2)
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
rDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
IS
ISM
VSD
Min
20
0.6
Typ Max Unit
Vdc
——
µAdc
— 1.0
— 5.0
±100
nAdc
0.058
0.072
0.070
0.095
Vdc
Ohms
90 — pF
50 —
10 —
8.0 20 ns
24 40
36 60
10 20
— — nC
— 1.0 A
— 5.0 A
— 1.2 V
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Part Number MGSF3442XT1
Description N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
Maker Motorola
Total Page 4 Pages
PDF Download
MGSF3442XT1 pdf
Download PDF File
[partsNo] view html
View PDF for Mobile






Related Datasheet

1 MGSF3442XT1 N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET Motorola
Motorola
MGSF3442XT1 pdf
2 MGSF3442XT1 Small-Signal MOSFETs Single N-Channel Field Effect Transistors ON Semiconductor
ON Semiconductor
MGSF3442XT1 pdf
3 MGSF3442XT3 Small-Signal MOSFETs Single N-Channel Field Effect Transistors ON Semiconductor
ON Semiconductor
MGSF3442XT3 pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components