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Motorola Electronic Components Datasheet

MGW20N120 Datasheet

Insulated Gate Bipolar Transistor

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MGW20N120 pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's Data Sheet
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time. Fast switching characteristics result in efficient
operation at high frequencies.
Industry Standard High Power TO–247 Package with
Isolated Mounting Hole
High Speed Eoff: 160 mJ/A typical at 125°C
High Short Circuit Capability – 10 ms minimum
Robust High Voltage Termination
C
Order this document
by MGW20N120/D
MGW20N120
Motorola Preferred Device
IGBT IN TO–247
20 A @ 90°C
28 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED
G
E
G
C
E
CASE 340F–03, Style 4
TO–247AE
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 M)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCES
VCGR
VGE
IC25
IC90
ICM
PD
1200
1200
±20
28
20
56
174
1.39
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/°C
Operating and Storage Junction Temperature Range
Short Circuit Withstand Time
(VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 )
Thermal Resistance — Junction to Case – IGBT
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 5 seconds
Mounting Torque, 6–32 or M3 screw
TJ, Tstg
tsc
– 55 to 150
10
°C
ms
RθJC
RθJA
0.7
35
TL 260
10 lbfSin (1.13 NSm)
°C/W
°C
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
© MMoototororloa,laIncT.M19O96S Power MOSFET Transistor Device Data
1


Motorola Electronic Components Datasheet

MGW20N120 Datasheet

Insulated Gate Bipolar Transistor

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MGW20N120 pdf
MGW20N120
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 25 µAdc)
Temperature Coefficient (Positive)
Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc)
Zero Gate Voltage Collector Current
(VCE = 1200 Vdc, VGE = 0 Vdc)
(VCE = 1200 Vdc, VGE = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc)
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 10 Adc)
(VGE = 15 Vdc, IC = 10 Adc, TJ = 125°C)
(VGE = 15 Vdc, IC = 20 Adc)
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
Forward Transconductance (VCE = 10 Vdc, IC = 20 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VCE = 25 Vdc, VGE = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VCC = 720 Vdc, IC = 20 Adc,
VGE = 15 Vdc, L = 300 mH
RG = 20 Ω, TJ = 25°C)
Energy losses include “tail”
Turn–Off Switching Loss
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VCC = 720 Vdc, IC = 20 Adc,
VGE = 15 Vdc, L = 300 mH
RG = 20 Ω, TJ = 125°C)
Energy losses include “tail”
Turn–Off Switching Loss
Gate Charge
(VCC = 720 Vdc, IC = 20 Adc,
VGE = 15 Vdc)
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25from package to emitter bond pad)
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
Symbol
BVCES
BVECS
ICES
IGES
VCE(on)
VGE(th)
gfe
Cies
Coes
Cres
td(on)
tr
td(off)
tf
Eoff
td(on)
tr
td(off)
tf
Eoff
QT
Q1
Q2
LE
Min Typ Max Unit
1200
870
Vdc
— mV/°C
25 — — Vdc
µAdc
— — 100
— — 2500
— — 250 nAdc
Vdc
— 3.00 3.54
— 2.36 —
— 2.90 4.99
Vdc
4.0 6.0 8.0
— 10 — mV/°C
— 12 — Mhos
— 1860 —
— 122 —
— 29 —
pF
— 88 — ns
— 103 —
— 190 —
— 284 —
1.65 3.75
mJ
— 83 — ns
— 107 —
— 216 —
— 494 —
— 3.19 —
mJ
— 62 — nC
— 21 —
— 25 —
nH
— 13 —
2 Motorola TMOS Power MOSFET Transistor Device Data


Part Number MGW20N120
Description Insulated Gate Bipolar Transistor
Maker Motorola
Total Page 6 Pages
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