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Motorola Electronic Components Datasheet

MRF9210R3 Datasheet

RF Power Field Effect Transistor

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MRF9210R3 pdf
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MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF9210/D
The RF MOSFET Line
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
MRF9210R3
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of this device make it ideal for large - signal, common source amplifier
applications in 26 volt base station equipment.
Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 x 950 mA
IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 40 Watts
Power Gain — 16.5 dB
Efficiency — 25.5%
Adjacent Channel Power —
750 kHz: - 46.2 dBc @ 30 kHz BW
1.98 MHz: - 60 dBc @ 30 kHz BW
Internally Matched, Controlled Q, for Ease of Use
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz,
40 Watts Avg. N - CDMA
Excellent Thermal Stability
Characterized with Series Equivalent Large - Signal Impedance Parameters
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
880 MHz, 200 W, 26 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375G - 04, STYLE 1
NI - 860C3
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
- 0.5, +15
565
3.2
- 65 to +150
200
Value (1)
0.31
Class
1 (Minimum)
M3 (Minimum)
C7 (Minimum)
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MMoOtorToOla,RInOc.L2A00R4 F DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF9210R3
1


Motorola Electronic Components Datasheet

MRF9210R3 Datasheet

RF Power Field Effect Transistor

No Preview Available !

MRF9210R3 pdf
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS (1)
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0)
IDSS
10 µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0)
IDSS
1 µAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 )
IGSS
1 µAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 330 µAdc)
VGS(th)
1.5
2.8
4 Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 800 mAdc)
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2.2 Adc)
VGS(Q)
2.5
3.3
4.5 Vdc
VDS(on)
0.2
0.4 Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 6.7 Adc)
gfs — 8.8 — S
DYNAMIC CHARACTERISTICS (1)
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 3.6 — pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier,
Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF
N - CDMA Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA,
f = 880 MHz)
Gps 15.8 16.5
dB
N - CDMA Drain Efficiency
(VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA,
f = 880 MHz)
η
23 25.5 —
%
Adjacent Channel Power Ratio
(VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA,
f = 880 MHz; ACPR @ 40 W, 1.23 MHz Bandwidth,
750 kHz Channel Spacing)
ACPR
- 46.2
- 45
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA,
f = 880 MHz)
IRL 9 17.5 — dB
N - CDMA Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA,
f = 865 MHz and 895 MHz)
Gps — 16.5 — dB
N - CDMA Drain Efficiency
(VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA,
f = 865 MHz and 895 MHz)
η
— 25.5 —
%
Adjacent Channel Power Ratio
ACPR — - 47.5 —
(VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA,
f = 865 MHz and 895 MHz; ACPR @ 40 W, 1.23 MHz Bandwidth,
750 kHz Channel Spacing)
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA,
f = 865 MHz and 895 MHz)
IRL — 15 — dB
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA,
f = 880 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
(1) Each side of device measured separately.
(2) Device measured in push - pull configuration.
MRF9210R3
2
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com


Part Number MRF9210R3
Description RF Power Field Effect Transistor
Maker Motorola
Total Page 8 Pages
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