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Motorola Electronic Components Datasheet

MRF927T3 Datasheet

(MRF927T1 / MRF927T3) LOW NOISE HIGH FREQUENCY TRANSISTOR

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MRF927T3 pdf
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Small Signal Line
NPN Silicon Low Voltage,
Low Current, Low Noise,
High-Frequency Transistors
Designed for use in low voltage, low current applications at frequencies to
2.0 GHz. Specifically aimed at portable communication devices such as
pagers and hand–held phones.
High Gain (GUmax 15 dB Typ @ 1.0 GHz) @ 1.0 mA
Small, Surface–Mount Package (SC–70)
High Current Gain–Bandwidth Product at Low Current,
Low Voltage (fτ = 8.0 GHz Typ @ 3.0 V, 5.0 mA)
Available in Tape and Reel by Adding T1 or T3 Suffix to Part Number.
T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel.
T3 Suffix = 10,000 Units per 8 mm, 7 inch Reel.
Order this document
by MRF927T1/D
MRF927T1
MRF927T3
IC = 10 mA
LOW NOISE
HIGH FREQUENCY
TRANSISTOR
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 50°C
Derate above 50°C
Storage Temperature Range
Operating Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction–to–Case
DEVICE MARKING
MRF927T1 = F
CASE 419–02, STYLE 3
(SC–70/SOT–323)
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
Symbol
RθJC
Value
10
20
2.5
10
100
1.0
– 55 to +150
150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
°C
°C
Value
1000
Unit
°C/W
REV 1
©MMOotTorOolRa,OInLc.A19R97F DEVICE DATA
MRF927T1 MRF927T3
1


Motorola Electronic Components Datasheet

MRF927T3 Datasheet

(MRF927T1 / MRF927T3) LOW NOISE HIGH FREQUENCY TRANSISTOR

No Preview Available !

MRF927T3 pdf
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 0.1 mA, IB = 0 mA)
Collector–Base Breakdown Voltage
(IC = 0.1 mA, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 0.1 mA, IC = 0)
Emitter Cutoff Current
(VEB = 1.0 Vdc, IC = 0)
V(BR)CEO
10
— Vdc
V(BR)CBO
20
— Vdc
V(BR)EBO
1.5
— Vdc
IEBO — — 0.1 µA
ON CHARACTERISTICS
DC Current Gain
(VCE = 1.0 Vdc, IC = 0.5 mA)
hFE 50 — 200 —
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
(VCB = 1.0 Vdc, IE = 0, f = 1.0 MHz)
Current–Gain Bandwidth Product
(VCE = 3.0 Vdc, IE = 5.0 mA, f = 1.0 GHz)
Ccb
— 0.33 —
pF
fτ — 8.0 — GHz
PERFORMANCE CHARACTERISTICS
Noise Figure — Minimum
(VCE = 1.0 Vdc, IC = 1.0 mA, f = 1000 MHz)
Associated Gain at Minimum Noise Figure
(VCE = 1.0 Vdc, IC = 1.0 mA, f = 1000 MHz)
Maximum Unilateral Gain
(VCE = 1.0 Vdc, IC = 1.0 mA, f = 1000 MHz)
Insertion Gain
(VCE = 1.0 Vdc, IC = 1.0 mA, f = 1000 MHz)
Noise Resistance
(VCE = 1.0 Vdc, IC = 1.0 mA, f = 1000 MHz)
Figure 3
Figure 3
NFmin
1.7
dB
GNF
— 9.8 —
dB
GUmax
15
dB
|S212|
8.0
dB
RN — 62 — Ohms
MRF927T1 MRF927T3
2
MOTOROLA RF DEVICE DATA


Part Number MRF927T3
Description (MRF927T1 / MRF927T3) LOW NOISE HIGH FREQUENCY TRANSISTOR
Maker Motorola
Total Page 12 Pages
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