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Motorola Electronic Components Datasheet

MTP10N40E Datasheet

TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS

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MTP10N40E pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTP10N40E/D
Designer's Data Sheet
TMOS E-FET.
High Energy Power FET
N–Channel Enhancement–Mode Silicon Gate
This advanced high voltage TMOS E–FET is designed to
withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain–to–source diode
with fast recovery time. Designed for high voltage, high speed
switching applications such as power supplies, PWM motor
controls and other inductive loads, the avalanche energy capability
is specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients.
Avalanche Energy Capability Specified at Elevated
Temperature
Low Stored Gate Charge for Efficient Switching
Internal Source–to–Drain Diode Designed to Replace External
Zener Transient Suppressor — Absorbs High Energy in the
Avalanche Mode
Source–to–Drain Diode Recovery Time Comparable to Discrete
Fast Recovery Diode
G
MTP10N40E
TMOS POWER FET
10 AMPERES
400 VOLTS
RDS(on) = 0.55 OHMS
®
D
S
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 M)
Gate–Source Voltage — Continuous
Gate–Source Voltage — Non–repetitive
VDSS
VDGR
VGS
VGSM
Drain Current — Continuous
Drain Current — Pulsed
ID
IDM
Total Power Dissipation
Derate above 25°C
PD
Operating and Storage Temperature Range
TJ, Tstg
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TJ < 150°C)
Single Pulse Drain–to–Source Avalanche Energy — TJ = 25°C
Single Pulse Drain–to–Source Avalanche Energy — TJ = 100°C
Repetitive Pulse Drain–to–Source Avalanche Energy
WDSR(1)
WDSR(2)
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient°
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 5 seconds
(1) VDD = 50 V, ID = 10 A
(2) Pulse Width and frequency is limited by TJ(max) and thermal response
RθJC
RθJA
TL
CASE 221A–06, Style 5
TO-220AB
Value
400
400
± 20
± 40
10
40
125
1.0
– 65 to 150
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Watts
W/°C
°C
520 mJ
83
13
1.0 °C/W
62.5
275 °C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
© MMoototororloa,laIncT.M19O96S Power MOSFET Transistor Device Data
1


Motorola Electronic Components Datasheet

MTP10N40E Datasheet

TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS

No Preview Available !

MTP10N40E pdf
MTP10N40E
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0, ID = 0.25 mA)
Zero Gate Voltage Drain Current
(VDS = 400 V, VGS = 0)
(VDS = 320 V, VGS = 0, TJ = 125°C)
Gate–Body Leakage Current — Forward (VGSF = 20 Vdc, VDS = 0)
Gate–Body Leakage Current — Reverse (VGSR = 20 Vdc, VDS = 0)
ON CHARACTERISTICS*
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
(TJ = 125°C)
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 5.0 A)
Drain–to–Source On–Voltage (VGS = 10 Vdc)
(ID = 5.0 A)
(ID = 2.5 A, TJ = 100°C)
Forward Transconductance (VDS = 15 Vdc, ID = 5.0 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS*
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 200 V, ID 10 A,
RL = 20 , RG = 9.1 ,
VGS(on) = 10 V)
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
(VDS = 320 V, ID = 10 A,
VGS = 10 V)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
Forward Turn–On Time
Reverse Recovery Time
(IS = 10 A, di/dt = 100 A/µs)
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the contact screw on tab to center of die)
(Measured from the drain lead 0.25from package to center of die)
V(BR)DSS
400
— Vdc
IDSS
mAdc
— — 0.25
— — 1.0
IGSSF
— — 100 nAdc
IGSSR — — 100 nAdc
VGS(th)
Vdc
2.0 — 4.0
1.5 — 3.5
RDS(on) — 0.4 0.55 Ohms
VDS(on)
Vdc
— 6.0
— 4.75
gFS
4.0 —
— mhos
Ciss
Coss
Crss
— 1570 —
— 230 —
— 55 —
pF
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
— 25 — ns
— 37 —
— 75 —
— 31 —
— 46 63 nC
— 10 —
— 23 —
VSD
ton
trr
— — 2.0 Vdc
— ** — ns
— 250 —
Ld nH
— 3.5 —
— 4.5 —
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
Ls
— 7.5 — nH
* Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%.
** Limited by circuit inductance.
2 Motorola TMOS Power MOSFET Transistor Device Data


Part Number MTP10N40E
Description TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
Maker Motorola
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