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Motorola Electronic Components Datasheet

MTP1306 Datasheet

TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM

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MTP1306 pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advance Information
HDTMOS E-FET.
High Density Power FET
N–Channel Enhancement–Mode Silicon Gate
This advanced high–cell density HDTMOS power FET is
designed to withstand high energy in the avalanche and commuta-
tion modes. This new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating area are critical and offer additional safety margin
against unexpected voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable
to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Order this document
by MTP1306/D
MTP1306
TMOS POWER FET
75 AMPERES
30 VOLTS
RDS(on) = 0.0065 OHM
CASE 221A–06
TO–220AB
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M)
Gate–to–Source Voltage — Continuous
— Non–Repetitive (tp 10 ms)
Drain Current — Continuous
— Continuous @ 100°C
— Single Pulse (tp 10 µs)
Total Power Dissipation
Derate above 25°C
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 75 Apk, L = 0.1 mH, RG = 25 )
Thermal Resistance — Junction–to–Case
— Junction–to–Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8from Case for 5.0 seconds
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
EAS
RθJC
RθJA
TL
Value
30
30
± 20
± 20
75
59
225
150
1.2
– 55 to 150
280
0.8
62.5
260
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET and HDTMOS are trademarks of Motorola, Inc.
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
© MMoototroorlao,lIancT. 1M99O7S Power MOSFET Transistor Device Data
1


Motorola Electronic Components Datasheet

MTP1306 Datasheet

TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM

No Preview Available !

MTP1306 pdf
MTP1306
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
V(BR)DSS
Vdc
30 — —
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
µAdc
— — 10
— — 100
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
IGSS
— — 100 nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 38 Adc)
(VGS = 5.0 Vdc, ID = 38 Adc)
VGS(th)
Vdc
1.0 1.5 2.0
RDS(on)
mW
— 5.8 6.5
— 7.4 8.5
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 75 Adc)
(VGS = 10 Vdc, ID = 38 Adc, TJ = 150°C)
VDS(on)
Vdc
— 0.44 0.5
— — 0.38
Forward Transconductance (VDS = 3.0 Vdc, ID = 20 Adc)
gFS 15 55 — mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS(2)
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
2560
3584
pF
1305
1827
— 386 772
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 15 Vdc, ID = 75 Adc,
VGS = 5.0 Vdc,
RG = 4.7 )
td(on)
tr
td(off)
tf
— 17 35 ns
— 170 340
— 68 136
— 145 290
Gate Charge
QT — 50 70 nC
(VDS = 24 Vdc, ID = 75 Adc,
VGS = 5.0 Vdc)
Q1 — 8.3 —
Q2 — 25.3 —
Q3 — 17.2 —
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
Vdc
— 0.75 1.1
— 0.64 —
Reverse Recovery Time
trr — 84 — ns
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
ta — 35 —
tb — 53 —
Reverse Recovery Stored Charge
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
QRR
— 0.13 —
µC
2 Motorola TMOS Power MOSFET Transistor Device Data


Part Number MTP1306
Description TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM
Maker Motorola
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