http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Motorola Electronic Components Datasheet

MTP1N80E Datasheet

TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHMS

No Preview Available !

MTP1N80E pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's Data Sheet
TMOS E-FET.
Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage–blocking capability without
degrading performance over time. In addition, this advanced TMOS
E–FET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
G
®
D
S
Order this document
by MTP1N80E/D
MTP1N80E
Motorola Preferred Device
TMOS POWER FET
1.0 AMPERES
800 VOLTS
RDS(on) = 12 OHMS
CASE 221A–06, Style 5
TO–220AB
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M)
Gate–to–Source Voltage — Continuous
— Non–Repetitive (tp 10 ms)
VDSS
VDGR
VGS
VGSM
800 Vdc
800 Vdc
± 20 Vdc
± 40 Vpk
Drain Current — Continuous
— Continuous @ 100°C
— Single Pulse (tp 10 µs)
Total Power Dissipation
Derate above 25°C
ID 1.0 Adc
ID 0.8
IDM 4.0 Apk
PD 48 Watts
0.38 W/°C
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, IL = 2.0 Apk, L = 10 mH, RG = 25 )
TJ, Tstg
EAS
– 55 to 150
20
°C
mJ
Thermal Resistance — Junction to Case°
— Junction to Ambient°
RθJC
RθJA
2.63°
62.5°
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 10 seconds
TL 260 °C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
© MMoototororloa,laIncT.M19O96S Power MOSFET Transistor Device Data
1


Motorola Electronic Components Datasheet

MTP1N80E Datasheet

TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHMS

No Preview Available !

MTP1N80E pdf
MTP1N80E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
800
— 0.981
Vdc
— mV/°C
Zero Gate Voltage Drain Current
(VDS = 800 Vdc, VGS = 0 Vdc)
(VDS = 800 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
IDSS
IGSS
µAdc
— — 10
— — 100
— — 100 nAdc
VGS(th)
Vdc
2.0 3.3 4.0
— 6.3 — mV/°C
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 0.5 Adc)
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 1.0 Adc)
(VGS = 10 Vdc, ID = 0.5 Adc, TJ = 125°C)
Forward Transconductance (VDS = 15 Vdc, ID = 0.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(VDD = 400 Vdc, ID = 1.0 Adc,
VGS = 10 Vdc,
RG = 9.1 )
(VDS = 400 Vdc, ID = 1.0 Adc,
VGS = 10 Vdc)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 1.0 Adc, VGS = 0 Vdc)
(IS = 1.0 Adc, VGS = 0 Vdc, TJ = 125°C)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
— 10.3 12 Ohm
Vdc
— 11 14.4
— — 12.6
0.4 1.4
— mhos
— 297 420 pF
— 29 40
— 6.0 10
— 9.0 20 ns
— 10 20
— 20 40
— 27 50
— 9.6 14 nC
— 2.1 —
— 4.2 —
— 4.7 —
Vdc
— 0.82 1.2
— 0.7 —
Reverse Recovery Time
(IS = 1.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25from package to center of die)
trr
ta
tb
QRR
LD
— 317 —
— 56 —
— 261 —
— 0.98 —
— 3.5 —
— 4.5 —
ns
µC
nH
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
LS
nH
— 7.5 —
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
2 Motorola TMOS Power MOSFET Transistor Device Data


Part Number MTP1N80E
Description TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHMS
Maker Motorola
Total Page 8 Pages
PDF Download
MTP1N80E pdf
Download PDF File
[partsNo] view html
View PDF for Mobile






Related Datasheet

1 MTP1N80E TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHMS Motorola
Motorola
MTP1N80E pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components