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Motorola Electronic Components Datasheet

MW5IC2030MBR1 Datasheet

RF LDMOS Wideband Integrated Power Amplifiers

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MW5IC2030MBR1 pdf
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MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MW5IC2030M/D
The Wideband IC Line
RF LDMOS Wideband Integrated
Power Amplifiers
The MW5IC2030 wideband integrated circuit is designed for base station
applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC
technology and integrates a multi - stage structure. Its wideband On - Chip
design makes it usable from 1930 to 1990 MHz. The linearity performances
cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, PHS,
CDMA and W - CDMA.
Final Application
Typical CDMA Performance: VDD = 27 Volts, IDQ1 = 160 mA,
IDQ2 = 230 mA, Pout = 5 Watts Avg., Full Frequency Band, IS - 95 CDMA
(Pilot, Sync, Paging, Traffic Codes 8 Through 13)
Power Gain — 23 dB
Drain Efficiency — 20%
ACPR @ 885 kHz Offset — - 49 dBc @ 30 kHz Channel Bandwidth
Driver Application
Typical CDMA Performance: VDD = 27 Volts, IDQ1 = 200 mA, IDQ2 =
550 mA, Pout = 1 Watt Avg., Full Frequency Band, IS - 95 CDMA (Pilot,
Sync, Paging, Traffic Codes 8 Through 13)
Power Gain — 24 dB
ACPR @ 885 kHz Offset — - 64 dBc @ 30 kHz Channel Bandwidth
On - Chip Matching (50 Ohm Input, >4 Ohm Output)
Integrated Temperature Compensation Capability with Enable/Disable
Function
On - Chip Current Mirror gm Reference FET for Self Biasing Application (1)
Integrated ESD Protection
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
Also Available in Gull Wing for Surface Mount
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
VDS1
VRD2
VRG2
RFin
VRD1
VDS2/RFout
VRG1/VGS1
VGS2
Quiescent Current
Temperature Compensation
Functional Block Diagram
MW5IC2030MBR1
MW5IC2030GMBR1
1930 - 1990 MHz, 30 W, 26 V
GSM/GSM EDGE, W - CDMA, PHS
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW5IC2030MBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW5IC2030GMBR1
PIN CONNECTIONS
GND
VDS1
VRD2
VRG2
GND
RFin
VRD1
VRG1/VGS1
VGS2
NC
GND
1
2
3
4
5
6
7
8
9
10
11
16 GND
15 NC
14
VDS2/
RFout
13 NC
12 GND
(Top View)
NOTE: Exposed backside flag is source
terminal for transistors.
(1) Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1987.
REV 2
MMoOtorToOla,RInOc.L2A00R4 F DEVICE DATA
MW5IC2030MBR1 MW5IC2030GMBR1
For More Information On This Product,
Go to: www.freescale.com
1


Motorola Electronic Components Datasheet

MW5IC2030MBR1 Datasheet

RF LDMOS Wideband Integrated Power Amplifiers

No Preview Available !

MW5IC2030MBR1 pdf
Freescale Semiconductor, Inc.
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature
Input Power
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
CDMA Application
(Pout = 5 W CW)
Stage 1, 27 Vdc, IDQ = 160 mA
Stage 2, 27 Vdc, IDQ = 230 mA
PHS Application
(Pout = 12.6 W CW)
Stage 1, 26 Vdc, IDQ = 300 mA
Stage 2, 26 Vdc, IDQ = 1300 mA
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
MOISTURE SENSITIVITY LEVEL
Test Methodology
Per JESD 22 - A113
Symbol
VDSS
VGS
Tstg
TJ
Pin
Symbol
RθJC
Value
65
- 0.5, +15
- 65 to +175
200
20
Value (1)
4.89
1.75
4.85
1.61
Class
1B (Minimum)
A (Minimum)
3 (Minimum)
Rating
3
Unit
Vdc
Vdc
°C
°C
dBm
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
CDMA FUNCTIONAL TESTS (In Motorola 1.9 GHz Test Fixture, 50 οhm system) VDD = 27 Vdc, IDQ1 = 160 mA, IDQ2 = 230 mA, Pout =
5 W Avg., 1960 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth
@ ± 885 kHz Offset. Peak/Avg. = 9.8 dB @ 0.01 Probability on CCDF.
Power Gain
Gps 21.5 23 — dB
Drain Efficiency
ηD 18 20 — %
Input Return Loss
IRL — - 18 - 10 dB
Adjacent Channel Power Ratio
ACPR
— - 47 dBc
Stability
(0 dBm<Pout<43 dBm CW; 3:1 VSWR)
No Spurious > - 60 dBc
Gain Flatness in 30 MHz BW, 1930 - 1990 MHz
GF — 0.2 0.3 dB
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1955.
(continued)
MW5IC2030MBR1 MW5IC2030GMBR1
MOTOROLA RF DEVICE DATA
2
For More Information On This Product,
Go to: www.freescale.com


Part Number MW5IC2030MBR1
Description RF LDMOS Wideband Integrated Power Amplifiers
Maker Motorola
Total Page 12 Pages
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