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NCE Power
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NCE7578 Datasheet Preview

NCE7578 Datasheet

NCE N-Channel Enhancement Mode Power MOSFET

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NCE7578 pdf
http://www.ncepower.com
NCE7578
Pb-Free Product
NCE N-Channel Enhancement Mode Power MOSFET
General Description
The NCE7578 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and
general purpose applications.
Product Summary
BVDSS typ.
RDS(ON) typ.
max.
ID
84
7.0
8.5
78
V
m
m
A
Features
VDS=75VID=78A@ VGS=10V
RDS(ON)<8.5m@ VGS=10V
Special process technology for high ESD capability
Special designed for Convertors and power controls
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
100% UIS TESTED!
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
TO-220-3L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE7578
NCE7578
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Table 1. Absolute Maximum Ratings (TC=25)
Parameter
Drain-Source Voltage (VGS=0V
Gate-Source Voltage (VDS=0V)
Drain Current (DC) at Tc=25
Drain Current (DC) at Tc=100
Drain Current-Continuous@ Current-Pulsed (Note 1)
Peak diode recovery voltage
Maximum Power Dissipation(Tc=25)
Derating factor
Single pulse avalanche energy (Note 2)
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS conditionTj=25,VDD=37.5V,VG=10V,L=0.5mH
Symbol
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
dv/dt
PD
EAS
TJ,TSTG
Value
75
±20
78
55
300
30
160
1.07
550
-55 To 175
Unit
V
V
A
A
A
V/ns
W
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.2



NCE Power
NCE Power

NCE7578 Datasheet Preview

NCE7578 Datasheet

NCE N-Channel Enhancement Mode Power MOSFET

No Preview Available !

NCE7578 pdf
http://www.ncepower.com
NCE7578
Pb-Free Product
Table 2. Thermal Characteristic
Parameter
Thermal ResistanceJunction-to-CaseMaximum
Thermal ResistanceJunction-to-Ambient Maximum
Symbol
RthJC
RthJA
Value
0.94
63
Unit
/W
/W
Table 3. Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Zero Gate Voltage Drain Current(Tc=125)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
BVDSS
IDSS
IDSS
IGSS
VGS(th)
RDS(ON)
VGS=0V ID=250μA
VDS=75V,VGS=0V
VDS=75V,VGS=0V
VGS=±20V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=40A
75 84
-
--
1
- - 10
- - ±100
2 2.85
4
- 7 8.5
V
μA
μA
nA
V
m
Dynamic Characteristics
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
gFS
VDS=5V,ID=30A
- 60
-
S
Clss
Coss
VDS=25V,VGS=0V,
F=1.0MHz
- 3400
- 290
-
-
PF
PF
Crss
- 221
-
PF
Qg
Qgs
VDS=30V,ID=30A,
VGS=10V
- 94
- 16
-
-
nC
nC
Qgd
- 24
-
nC
Switching times
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf
VDD=30V,ID=2A,RL=15
VGS=10V,RG=2.5
- 15
- 11
- 52
- 13
-
-
-
-
nS
nS
nS
nS
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
ISD
- - 78
A
Pulsed Source-drain current(Body Diode)
ISDM
- - 312 A
Forward on voltage(Note 1)
VSD
Tj=25,ISD=40A,VGS=0V
- - 1.2
V
Reverse Recovery Time(Note 1)
Reverse Recovery Charge(Note 1)
trr
Qrr
- - 33 nS
Tj=25,IF=75A,di/dt=100A/μs
-
-
54
nC
Forward Turn-on Time
ton Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
Notes 1.Pulse Test: Pulse Width 300μs, Duty Cycle 1.5%, RG=25, Starting Tj=25
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.2


Part Number NCE7578
Description NCE N-Channel Enhancement Mode Power MOSFET
Maker NCE Power
Total Page 7 Pages
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