MOS FIELD EFFECT TRANSISTOR
P-CHANNEL POWER MOS FET
The 2SJ606 is P-channel MOS Field Effect Transistor designed
for high current switching applications.
• Super low on-state resistance:
RDS(on)1 = 15 mΩ MAX. (VGS = −10 V, ID = −42 A)
RDS(on)2 = 23 mΩ MAX. (VGS = −4.0 V, ID = −42 A)
• Low input capacitance:
Ciss = 4800 pF TYP. (VDS = −10 V, VGS = 0 V)
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg −55 to +150
Note TO-220SMD package is produced only in
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14654EJ3V0DS00 (3rd edition)
Date Published July 2002 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.