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  NEC Electronic Components Datasheet  

2SK3297 Datasheet

MOS FIELD EFFECT TRANSISTOR

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3297
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3297 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
Low gate charge
QG = 18 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 5.0 A)
Gate voltage rating ±30 V
Low on-state resistance
RDS(ON) = 1.6 MAX. (VGS = 10 V, ID = 2.5 V)
Avalanche capability ratings
Isolated TO-220 package
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3297
Isolated TO-220
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS
Gate to Source Voltage (VDS = 0 V) VGSS
Drain Current(DC) (TC = 25°C)
Drain Current(pulse) Note1
ID(DC)
ID(pulse)
600
±30
±5.0
±20
V
V
A
A
Total Power Dissipation (TA = 25°C) PT1
2.0 W
Total Power Dissipation (TC = 25°C) PT2
35 W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg 55 to +150 °C
Single Avalanche Current Note2
IAS
5.0 A
Single Avalanche Energy Note2
EAS
16.7 mJ
Notes1. PW 10 µs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 , VGS = 20 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14058EJ1V0DS00 (1st edition)
Date Published November 2000 NS CP (K)
Printed in Japan
©
1999, 2000


  NEC Electronic Components Datasheet  

2SK3297 Datasheet

MOS FIELD EFFECT TRANSISTOR

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2SK3297 pdf
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ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Symbol
Test Conditions
Zero Gate Voltage Drain Current
IDSS
VDS = 600 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±30 V, VDS = 0 V
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
VGS(off)
| yfs |
RDS(on)
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 2.5 A
VGS = 10 V, ID = 2.5 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
VDS = 10 V
VGS = 0 V
f = 1 MHz
VDD = 150 V, ID = 2.5 A
VGS(on) = 10 V
RG = 10
VDD = 450 V
VGS = 10 V
ID = 5.0 A
IF = 5.0 A, VGS = 0 V
IF = 5.0 A, VGS = 0 V
Reverse Recovery Charge
Qrr di/dt = 50 A/µs
2SK3297
MIN.
2.5
1.5
TYP.
1.3
750
130
9.7
17
3
37
10
18
4
7
0.9
1.4
5.3
MAX.
100
±100
3.5
1.6
Unit
µA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
µs
µC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1%
RL VGS
VGS
Wave Form
0 10%
VGS(on) 90%
VDD
ID 90%
ID 0 10%
Wave Form
ID
90%
10%
td(on) tr td(off) tf
ton toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D14058EJ1V0DS


Part Number 2SK3297
Description MOS FIELD EFFECT TRANSISTOR
Maker NEC
Total Page 8 Pages
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