MOS FIELD EFFECT TRANSISTOR
N-CHANNEL POWER MOS FET
The 2SK3635 is N-channel MOS FET device that features
a low on-state resistance and excellent switching
characteristics, and designed for high voltage applications
such as DC/DC converter.
• High voltage: VDSS = 200 V
• Gate voltage rating: ±30 V
• Low on-state resistance
RDS(on) = 0.43 Ω MAX. (VGS = 10 V, ID = 4.0 A)
• Low Ciss: Ciss = 390 pF TYP.
• Built-in gate protection diode
• TO-251/TO-252 package
• Avalanche capability rated
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Single Avalanche Current Note2
Single Avalanche Energy Note2
Repetitive Avalanche Current Note3
Repetitive Avalanche Energy Note3
–55 to +150
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 100 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH
3. Tch ≤ 125°C, RG = 25 Ω, VDD = 100 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15932EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.