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  NEC Electronic Components Datasheet  

2SK3635 Datasheet

SWITCHING N-CHANNEL POWER MOSFET

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3635
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3635 is N-channel MOS FET device that features
a low on-state resistance and excellent switching
characteristics, and designed for high voltage applications
such as DC/DC converter.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3635
TO-251 (MP-3)
2SK3635-Z
TO-252 (MP-3Z)
FEATURES
High voltage: VDSS = 200 V
Gate voltage rating: ±30 V
Low on-state resistance
RDS(on) = 0.43 MAX. (VGS = 10 V, ID = 4.0 A)
Low Ciss: Ciss = 390 pF TYP.
Built-in gate protection diode
TO-251/TO-252 package
Avalanche capability rated
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Repetitive Avalanche Current Note3
Repetitive Avalanche Energy Note3
Tstg
IAS
EAS
IAR
EAR
200
±30
±8.0
±24
24
1.0
150
–55 to +150
8
6.4
8
2.4
V
V
A
A
W
W
°C
°C
A
mJ
A
mJ
(TO-252)
Notes 1. PW 10 µs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 100 V, RG = 25 , VGS = 20 0 V, L = 100 µH
3. Tch 125°C, RG = 25 , VDD = 100 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15932EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
2001


  NEC Electronic Components Datasheet  

2SK3635 Datasheet

SWITCHING N-CHANNEL POWER MOSFET

No Preview Available !

2SK3635 pdf
2SK3635
ELECTRICAL CHARACTERISTICS (TA = 25°C)
www.DataSheeCt4HUA.cRoAmCTERISTICS
Zero Gate Voltage Drain Current
SYMBOL
TEST CONDITIONS
IDSS VDS = 200 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±30 V, VDS = 0 V
Gate Cut-off Voltage
VGS(off) VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 4.0 A
Drain to Source On-state Resistance
RDS(on) VGS = 10 V, ID = 4.0 A
Input Capacitance
Ciss VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 100 V, ID = 4.0 A
Rise Time
tr VGS = 10 V
Turn-off Delay Time
Fall Time
td(off)
tf
RG = 0
Total Gate Charge
QG VDD = 160 V
Gate to Source Charge
QGS
VGS = 10 V
Gate to Drain Charge
QGD ID = 8.0 A
Body Diode Forward Voltage
VF(S-D) IF = 8 A, VGS = 0 V
Reverse Recovery Time
trr IF = 8 A, VGS = 0 V
Reverse Recovery Charge
Qrr di/dt = 100 A/µs
MIN. TYP. MAX. UNIT
10 µA
±10 µA
2.5 3.5 4.5
V
35
S
0.34 0.43
390 pF
95 pF
45 pF
5 ns
7 ns
19 ns
6 ns
12 nC
2 nC
6 nC
1.0 V
110 ns
360 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
0 10%
VGS 90%
ID 90%
ID
Wave Form
0 10%
td(on)
ID
tr td(off)
90%
10%
tf
ton toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D15932EJ2V0DS


Part Number 2SK3635
Description SWITCHING N-CHANNEL POWER MOSFET
Maker NEC
Total Page 8 Pages
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