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  NEC Electronic Components Datasheet  

A1645 Datasheet

2SA1645

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A1645 pdf
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DATA SHEET
SILICON POWER TRANSISTOR
2SA1645, 2SA1645-Z
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1645 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation voltage. This transistor is ideal for use in switching
power supplies, DC/DC converters, motor drivers, solenoid drivers,
and other low-voltage power supply devices, as well as for high-
current switching.
FEATURES
• Fast switching speed
• Low collector-to-emitter saturation voltage:
VCE(sat) = 0.3 V MAX. @IC = 4 A
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Collector to base voltage
Collector to emitter
voltage
Emitter to base voltage
Collector current
Collector current
Base current
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
Conditions
VEBO
ID(DC)
IC(pulse)
PW 300 µs,
Duty Cycle
10%
IB(DC)
PT Tc = 25 °C
PT Ta = 25 °C
Tj
Tstg
Ratings
150
100
Unit
V
V
7.0
7.0
14
V
A
A
3.5
35
1.5
150
55 to
+150
A
W
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15587EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
www.DataSheet4U.com
©
2002


  NEC Electronic Components Datasheet  

A1645 Datasheet

2SA1645

No Preview Available !

A1645 pdf
2SA1645, 2SA1645-Z
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO VCB = 100 V, IE = 0
Emitter cutoff current
IEBO VEB = 5 V, IC = 0
DC current gain
hFE1* VCE = 2 V, IC = 0.5 A
DC current gain
hFE2* VCE = 2 V, IC = 1.5 A
DC current gain
hFE3* VCE = 2 V, IC = 4 A
Collector saturation voltage VCE(sat)1* IC = 4 A, IB = 0.2 A
Collector saturation voltage VCE(sat)2* IC = 6 A, IB = 0.3 A
Base saturation voltage
VBE(sat)1* IC = 4 A, IB = 0.2 A
Base saturation voltage
VBE(sat)2* IC = 6 A, IB = 0.3 A
Gain bandwidth product
fT VCE = 10 V, IC = 1.5 A
Collector capacitance
Cob VCB = 10 V, IE = 0, f = 1 MHz
Turn-on time
Storage time
Fall time
ton IC = 4 A, IB1 = IB2 = 0.2 A,
tstg RL = 12.5 , VCC = 50 V
Refer to the test circuit.
tf
* Pulse test PW 350 µs, duty cycle 2%
hFE CLASSIFICATION
Marking
hFE2
M
100 to 200
L
150 to 300
K
200 to 400
SWITCHING TIME TEST CIRCUIT
MIN.
100
100
60
TYP.
150
150
0.3
1.5
0.4
MAX.
10
10
400
0.3
0.5
1.2
1.5
Unit
µA
µA
V
V
V
V
MHz
pF
µs
µs
µs
Base current
waveform
Collector current
waveform
2 Data Sheet D15587EJ2V0DS


Part Number A1645
Description 2SA1645
Maker NEC
Total Page 6 Pages
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A1645 pdf
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