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  NEC Electronic Components Datasheet  

K2462 Datasheet

2SK2462

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K2462 pdf
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2462
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2462 is N-Channel MOS Field Effect Transistor de-
signed for high current switching applications.
FEATURES
Low On-Resistance
RDS(on)1 = 0.14 MAX. (@ VGS = 10 V, ID = 8.0 A)
RDS(on)2 = 0.17 MAX. (@ VGS = 4 V, ID = 8.0 A)
Low Ciss Ciss = 790 pF TYP.
Built-in G-S Gate Protection Diodes
High Avalanche Capability Ratings
PACKAGE DIMENSIONS
(in millimeters)
10.0 ±0.3
4.5 ±0.2
3.2 ±0.2
2.7 ±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
100 V
Gate to Source Voltage
VGSS
±20 V
Drain Current (DC)
ID(DC)
±15 A
Drain Current (pulse)*
ID(pulse)
±60 A
Total Power Dissipation (Tc = 25 ˚C) PT1
30 W
Total Power Dissipation (TA = 25 ˚C) PT2
2.0 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS
15 A
Single Avalanche Energy** EAS 22.5 mJ
* PW 10 µs, Duty Cycle 1 %
** Starting Tch = 25 ˚C, RG = 25 , VGS = 20 V 0
0.7 ±0.1
2.54
1.3 ±0.2
2.5 ±0.1
1.5 ±0.2 0.65 ±0.1
2.54
1 23
1. Gate
2. Drain
3. Source
MP-45F(ISOLATED TO-220)
Drain
Gate
Body
Diode
Gate Protection
Diode
Source
The diode connected between the gate and source of the
transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is
externally required if a voltage exceeding rated voltage may
be applied to this device.
Document No. D10031EJ1V0DS00
Date Published May 1995 P
Printed in Japan
© 1995


  NEC Electronic Components Datasheet  

K2462 Datasheet

2SK2462

No Preview Available !

K2462 pdf
2SK2462
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Drain to Source On-Resistance
Drain to Source On-Resistance
Gate to Source Cutoff Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
RDS(on)1
RDS(on)2
VGS(off)
| yfs |
IDSS
IGSS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
MIN.
1.0
7.0
TYP.
0.10
0.12
1.6
14
790
280
88
16
110
88
62
33
5.4
25
1.1
160
670
MAX.
0.14
0.17
2.0
10
±10
UNIT
V
S
µA
µA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CONDITIONS
VGS = 10 V, ID = 8.0 A
VGS = 4 V, ID = 8.0 A
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 8.0 A
VDS = 100 V, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 8.0 A
VGS(on) = 10 V
VDD = 50 V
RG = 10
ID = 15 A
VDD = 80 V
VGS = 10 V
IF = 15 A, VGS = 0
IF = 15 A, VGS = 0
di/dt = 100 A/µs
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
D.U.T.
RG = 25
PG
VGS = 20 0 V
50
L
VDD
ID
VDD
IAS BVDSS
VDS
Test Circuit 3 Gate Charge
D.U.T.
IG = 2 mA
PG.
50
Starting Tch
RL
VDD
D.U.T.
RG
PG. RG = 10
VGS
0
t
t = 1µs
Duty Cycle 1 %
RL VGS VGS
Wave 010 %
VDD Form
VGS (on)
ID 90 %
ID
Wave
Form
10 %
0
td (on)
ID
t tr d (off)
90 %
90 %
10 %
tf
ton toff
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2


Part Number K2462
Description 2SK2462
Maker NEC
Total Page 8 Pages
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