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  NEC Electronic Components Datasheet  

K2981 Datasheet

2SK2981

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K2981 pdf
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2981
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
Low on-resistance
RDS(on)1 = 27 m(MAX.) (VGS = 10 V, ID = 10 A)
RDS(on)2 = 40 m(MAX.) (VGS = 4.5 V, ID = 10 A)
RDS(on)3 = 50 m(MAX.) (VGS = 4 V, ID = 10 A)
Low Ciss : Ciss = 860 pF (TYP.)
Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK2981
TO-251
2SK2981-Z
TO-252
PACKAGE DRAWING (Unit : mm)
6.5 ±0.2
5.0 ±0.2
4
1 23
1.3 MAX.
2.3 ±0.2
0.5 ±0.1
0.6 ±0.1
2.3 2.3
0.6 ±0.1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
TO-251(MP-3)
6.5 ±0.2
5.0 ±0.2
4
2.3 ±0.2
0.5 ±0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0)
VDSS
30
Gate to Source Voltage (VDS = 0)
VGSS
±20
Drain Current (DC)
Drain Current (Pulse) Note
ID(DC)
ID(pulse)
±20
±80
Total Power Dissipation (Tc = 25 °C) PT 20
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to + 150
V
V
A
A
W
°C
°C
Note PW 10 µs, Duty cycle 1 %
12 3
1.3 MAX.
2.3 2.3
0.9 0.8
MAX. MAX.
0.8
1. Gate
2. Drain
3. Source
4. Fin (Drain)
TO-252(MP-3Z) (SURFACE MOUNT TYPE)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice.
Document No. D12355EJ1V0DS00 (1st edition)
Date Published December 1998 NS CP(K)
Printed in Japan
© 1998


  NEC Electronic Components Datasheet  

K2981 Datasheet

2SK2981

No Preview Available !

K2981 pdf
2SK2981
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain to Source On-state Resistance
RDS(on)1 VGS = 10 V, ID = 10 A
RDS(on)2 VGS = 4.5 V, ID = 10 A
RDS(on)3 VGS = 4 V, ID = 10 A
Gate to Source Cut-off Voltage
VGS(off) VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 10 A
Drain Leakage Current
IDSS VDS = 30 V, VGS = 0
Gate to Source Leakage Current
IGSS VGS = ±20 V, VDS = 0
Input Capacitance
Ciss VDS = 10 V, VGS = 0, f = 1 MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-on Delay Time
td(on)
ID = 10 A, VGS(on) = 10 V, VDD = 15 V
Rise Time
tr RG = 10
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG ID = 20 A, VDD = 24 V, VGS = 10 V
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
Body Diode forward Voltage
VF(S-D) IF = 20 A, VGS = 0
Reverse Recovery Time
trr IF = 20 A, VGS = 0
Reverse Recovery Charge
Qrr di/dt = 100 A/µs
MIN. TYP. MAX. UNIT
20 27 m
30 40 m
35 50 m
1.0 1.5 2.0 V
6.0 13.0
S
10 µA
±10 µA
860 pF
350 pF
160 pF
25 ns
270 ns
65 ns
65 ns
20 nC
3.5 nC
6.5 nC
0.8 V
35 ns
30 nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
RG
PG. RG = 10
VGS
0
t
t = 1µ s
Duty Cycle 1 %
RL
VDD
VGS
VGS
Wave Form
0 10 %
VGS (on) 90 %
ID 90 %
ID
Wave Form
0 10 %
ID
90 %
10 %
td (on) tr td (off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D12355EJ1V0DS00


Part Number K2981
Description 2SK2981
Maker NEC
Total Page 8 Pages
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