http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




  NEC Electronic Components Datasheet  

NE76184AS Datasheet

GENERAL PURPOSE L TO X-BAND GaAs MESFET

No Preview Available !

NE76184AS pdf
www.DataSheet4U.com
GENERAL PURPOSE NE76184AS
L TO X-BAND GaAs MESFET
FEATURES
• LOW NOISE FIGURE:
0.8 dB typical at 4 GHz
• HIGH ASSOCIATED GAIN:
12 dB typical at 4 GHz
• LG = 1.0 µm, WG = 400 µm
• LOW COST METAL/CERAMIC PACKAGE
• TAPE & REEL PACKAGING OPTION AVAILABLE
DESCRIPTION
NE76184AS is a high performance gallium arsenide metal
semiconductor field effect transistor housed in an epoxy-
sealed, metal/ceramic package. Its low noise figure makes
this device appropriate for use in the second or third stages of
low noise amplifiers operating in the 1-12 GHz frequency
range. The device is fabricated using ion implantation for
improved RF and DC performance, reliability, and uniformity.
The NE76184AS is suitable for DBS, TVRO, GPS and other
commercial applications.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
VDS = 3 V, IDS = 10 mA
4
3.5
GA
3
2.5
2
1.5
1
NF
0.5
0
1
10
Frequency, f (GHz)
20
24
21
18
15
12
9
6
3
0
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOL
NF1
GA1
P1dB
G1dB
IDSS
VP
gm
IGSO
RTH
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Noise Figure at VDS = 3 V, ID = 10 mA, f = 4 GHz
Associated Gain at VDS = 3 V, ID = 10 mA, f = 4 GHz
Output Power at 1 dB Gain Compression Point, f = 4 GHz
VDS = 3 V, IDS = 10 mA
VDS = 3 V, IDS = 30 mA
Gain at P1dB, f = 4 GHz
VDS = 3 V, IDS = 10 mA
VDS = 3 V, IDS = 30 mA
Saturated Drain Current at VDS = 3 V, VGS = 0
Pinch Off Voltage at VDS = 3 V, ID = 100 µA
Transconductance at VDS = 3 V, ID = 10 mA
Gate to Source Leak Current at VGS = -5 V
Thermal Resistance
UNITS
dB
dB
dBm
dBm
dB
dB
mA
V
mS
µA
°C/W
NE76184AS
84AS
MIN TYP MAX
0.8 1.4
12.0
12.5
15.0
11.5
13.5
30 60 100
-3.0 -1.1 -0.5
20 45
10
300
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line
as a "go-no-go" screening test with the fixture tuned for the "generic" type but not for each specimen.
California Eastern Laboratories


  NEC Electronic Components Datasheet  

NE76184AS Datasheet

GENERAL PURPOSE L TO X-BAND GaAs MESFET

No Preview Available !

NE76184AS pdf
NE76184AS
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VDS Drain to Source Voltage
V
5
VGDO
Gate to Drain Voltage
V
-5
VGSO
Gate to Source Voltage
V
-6
IDS Drain Current
mA IDSS
TCH Channel Temperature
°C
150
TSTG
Storage Temperature
°C -65 to +150
PT
Total Power Dissipation
mW
300
Note:
1.Operation in excess of any one of these parameters may result in
permanent damage.
TYPICAL NOISE PARAMETERS (TA = 25°C)
VDS = 3 V, IDS = 10 mA
FREQ.
(GHz)
NFOPT
(dB)
GA
(dB)
ΓOPT
MAG ANG
Rn/50
1.0 0.55 18.0 0.92 19 0.60
2.0 0.60 15.0 0.81 40 0.55
4.0 0.80 12.0 0.66 82 0.35
6.0 1.15 10.0 0.54 125 0.25
8.0 1.60 8.5 0.46 167 0.10
10.0 2.15 7.5 0.41 -152 0.25
12.0 2.70 6.5 0.41 -108 0.48
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
400
350
300
250 Infinite
Heat sink
200
150
100
Free Air
50
0
0
25 50 75 100 125 150 175 200
Ambient Temperature, TA (°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
80
VGS
0
60
-0.2
40
-0.4
20 -0.6
0
0 1 23
-0.8
-1.0
4
5
Drain to Source Voltage, VDS (V)
NOISE FIGURE & ASSOCIATED GAIN vs.
DRAIN CURRENT
VDS = 3 V, f = 4 GHz
2.5 15
14
GA
2 13
12
1.5 11
NF
10
1
0.5
0
10 20 30 40
50
Drain Current, IDS (mA)
9
8
7
60
75
60
45
30
15
0
0
TRANSCONDUCTANCE vs.
DRAIN CURRENT
VDS = 3 V
20 40 60 80
Drain Current, IDS (mA)
100


Part Number NE76184AS
Description GENERAL PURPOSE L TO X-BAND GaAs MESFET
Maker NEC
Total Page 4 Pages
PDF Download
NE76184AS pdf
Download PDF File
NE76184AS pdf
View for Mobile



Buy Electronic Components




Related Datasheet

1 NE76184A GENERAL PURPOSE FET N-CHANNEL GaAs MES FET NEC
NEC
NE76184A pdf
2 NE76184AS GENERAL PURPOSE L TO X-BAND GaAs MESFET NEC
NEC
NE76184AS pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components