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  NEC Electronic Components Datasheet  

NESG2030M04 Datasheet

NONLINEAR MODEL

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NESG2030M04 pdf
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NPN SiGe HIGH FREQUENCY TRANSISTOR NESG2030M04
FEATURES
SiGe TECHNOLOGY:
fT = 60 GHz Process
LOW NOISE FIGURE:
NF = 0.9 dBm at 2 GHz
• HIGH MAXIMUM STABLE GAIN:
MSG = 20 dB at 2 GHz
NEW LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
DESCRIPTION
The NESG2030M04 is fabricated using NEC's state-of-the-art
SiGe, wafer process. With a typical transition frequency of
60 GHz the NESG2030M04 is usable in applications from 100
MHz to over 10 GHz. Maximum DC current input of 35 mA
provides a device with a usable current range of 250 µA to 25
mA. The NESG2030M04 provides excellent low voltage/low
current performance.
NEC's new low profile/flat lead style "M04" package is ideal for
today's portable wireless applications. The NESG2030M04 is
an ideal choice for LNA and oscillator requirements in all
mobile communication systems.
M04
ORDERING INFORMATION
PART NUMBER
QUANTITY
NESG2030M04
50 pcs(non reel)
NESG2030M04-T2 3 kpcs/reel
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
ICBO
IEBO
hFE
Cre
NF
Ga
MSG
|S21E|2
P1dB
OIP3
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Collector Cutoff Current at VCB = 5V, IE = 0
Emitter Cutoff Current at VEB = 0.5 V, IC = 0
DC Current Gain2 at VCE = 2 V, IC = 5 mA
Reverse Transfer Capacitance3 at VCB = 2 V, IE = 0 mA, f = 1 GHz
Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZIN = ZOPT
Associated Gain at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = ZOPT
Maximum Stable Gain4 at VCE = 2 V, IC = 20 mA, f = 2 GHz
Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz
Output Power at 1 dB compression point
VCE = 2 V, IC = 20 mA, f = 2 GHz
Third Order Intercept Point, VCE = 2 V, IC = 20 mA, f = 2 GHz
UNITS
nA
nA
pF
dB
GHz
dB
dB
dBm
dBm
NESG2030M04
2SC5761
M04
MIN TYP MAX
200
200
200 400
0.17 0.22
0.9 1.1
16
18 20
16 18
12
22
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width 350 µs, duty cycle 2 %.
3. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to
the guard pin.
4. MSG = S21
S12
California Eastern Laboratories


  NEC Electronic Components Datasheet  

NESG2030M04 Datasheet

NONLINEAR MODEL

No Preview Available !

NESG2030M04 pdf
NESG2030M04
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCBO Collector to Base Voltage
V
8.0
VCEO Collector to Emitter Voltage V
2.3
VEBO Emitter to Base Voltage
V
1.2
IC Collector Current
mA 35
PT2 Total Power Dissipation
mW
80
TJ Junction Temperature °C 150
TSTG Storage Temperature
°C -65 to +150
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on 1.08 cm2 • 1.0 mm (t) glass epoxy substrate
THERMAL RESISTANCE
SYMBOLS
PARAMETERS
UNITS
Rth j-c Junction to Case Resistance °C/W
RATINGS
150
TYPICAL PERFORMANCE CURVES (TA = 25°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
35 190 µa
30 160 µa
25 130 µa
20 100 µa
15 70 µa
10 40 µa
5 IB = 10 µa
0
01 2
3
Collector to Emitter Voltage, VCE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1000
VCE = 2 V
100
10
0.1
1 10
Collector Current, lC (mA)
100
GAIN BANDWIDTH vs.
COLLECTOR CURRENT
40
VCE = 2 V
f = 2 GHz
35
30
25
20
15
10
5
0
0 10
Collector Current, IC (mA)
100
INSERTION POWER GAIN
vs. FREQUENCY
30
VCE = 2 V
IC = 20 mA
25
20
15
10
5
0
0.1
1
Frequency, f (GHz)
10


Part Number NESG2030M04
Description NONLINEAR MODEL
Maker NEC
Total Page 9 Pages
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