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  NEC Electronic Components Datasheet  

UPA1857 Datasheet

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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UPA1857 pdf
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA1857
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA1857 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
FEATURES
Low on-state resistance
RDS(on)1 = 67.0 mMAX. (VGS = 10 V, ID = 2.0 A)
RDS(on)2 = 86.0 mMAX. (VGS = 4.5 V, ID = 2.0 A)
RDS(on)3 = 95.0 mMAX. (VGS = 4.0 V, ID = 2.0 A)
Low Ciss Ciss = 580 pF TYP.
Built-in G-S protection diode against ESD
ORDERING INFORMATION
PART NUMBER
PACKAGE
µ PA1857GR-9JG
Power TSSOP8
PACKAGE DRAWING (Unit: mm)
85
1 :Drain1
2, 3 :Source1
4 :Gate1
5 :Gate2
6, 7 :Source2
8 :Drain2
1.2 MAX.
1.0±0.05
0.25
14
3°
+5°
–3°
0.1±0.05
0.5
0.6
+0.15
–0.1
3.15 ±0.15
3.0 ±0.1
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
0.65 0.8 MAX.
0.27
+0.03
–0.08
0.10 M
0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TA = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation(1unit)Note2
Total Power Dissipation(2unit)Note2
ID(DC)
ID(pulse)
PT1
PT2
±3.8
±15.2
1.0
1.7
A
A
W
W
Channel Temperature
Tch 150 °C
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg –55 to +150 °C
IAS 3.8
A
EAS 33 mJ
Notes 1. PW 10 µs, Duty Cycle 1%
2. TA = 25°C Mounted on ceramic substrate of 50 cm2 x 1.1 mm
3. Starting Tch = 25°C, VDD = 30 V, RG = 25 , VGS = 20 0 V
EQUIVALENT CIRCUIT
Drain1
Drain2
Gate1
Body
Diode Gate2
Body
Diode
Gate
Protection
Diode
Source1
Gate
Protection
Diode
Source2
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G15060EJ2V0DS00 (2nd edition)
Date Published April 2001 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
2001


  NEC Electronic Components Datasheet  

UPA1857 Datasheet

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

No Preview Available !

UPA1857 pdf
µPA1857
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 60 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
Gate Cut-off Voltage
VGS(off) VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 2.0 A
Drain to Source On-state Resistance
RDS(on)1 VGS = 10 V, ID = 2.0 A
RDS(on)2 VGS = 4.5 V, ID = 2.0 A
RDS(on)3 VGS = 4.0 V, ID = 2.0 A
Input Capacitance
Ciss VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 30 V, ID = 2.0 A
Rise Time
tr VGS = 10 V
Turn-off Delay Time
td(off)
RG = 6
Fall Time
tf
Total Gate Charge
QG VDD = 48 V
Gate to Source Charge
QGS
VGS = 10 V
Gate to Drain Charge
QGD ID = 3.8 A
Body Diode Forward Voltage
VF(S-D) IF = 3.8 A, VGS = 0 V
Reverse Recovery Time
trr IF = 3.8 A, VGS = 0 V
Reverse Recovery Charge
Qrr di/dt = 100 A / µs
MIN.
1.5
2.5
TYP.
2.0
5.4
53
64
71
580
100
50
10
9
32
4
12
2
3
0.80
33
58
MAX.
10
±10
2.5
67.0
86.0
95.0
UNIT
µA
µA
V
S
m
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
ID
VDD
IAS
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG. RG
VGS
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
90%
VGS(on)
90%
10% 10%
tr td(off)
tf
ton toff
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet G15060EJ2V0DS


Part Number UPA1857
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Maker NEC
Total Page 8 Pages
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