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  NEC Electronic Components Datasheet  

UPC2708T Datasheet

3 GHz SILICON MMIC WIDE-BAND AMPLIFIER

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UPC2708T pdf
3 GHz SILICON MMIC UPC2708T
WIDE-BAND AMPLIFIER UPC2711T
FEATURES
• WIDE FREQUENCY RESPONSE: 3 GHz
• HIGH GAIN: 15 dB (UPC2708T)
• SATURATED OUTPUT POWER: +10 dBm (UPC2708T)
• INTERNAL CURRENT REGULATION MINIMIZES GAIN
CHANGE OVER TEMPERATURE
• 5 V SINGLE SUPPLY VOLTAGE
• SUPER SMALL PACKAGE
TAPE AND REEL PACKAGING OPTION AVAILABLE
DESCRIPTION
The UPC2708T and UPC2711T are Silicon Monolithic inte-
grated circuits manufactured using the NESAT III process.
These devices are suitable as buffer amplifiers for wide-band
applications. They are designed for low cost gain stages in
cellular radios, GPS receivers, DBS tuners, PCN, and test/
measurement equipment.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
GAIN vs. FREQUENCY
20
15 UPC2708
UPC2711
10
5
0
0 0.5 1.0 1.5 2.0 2.5 3.0
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (TA = 25 °C, f = 1 GHz, VCC = 5 V)
SYMBOLS
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
UNITS
ICC
GS
fU
GS
PSAT
P1dB
NF
RLIN
Circuit Current (no signal)
Small Signal Gain
Upper Limit Operating Frequency
(The gain at fU is 3 dB down from the gain at 0.1 GHz)
Gain Flatness, f = 0.1 - 2.6 GHz
f = 0.1 - 2.5 GHz
Saturated Output Power
Output Power at 1 dB Compression Point
Noise Figure
Input Return Loss
mA
dB
GHz
dB
dBm
dBm
dB
dB
RLOUT
ISOL
GT
RTH
Output Return Loss
Isolation
Gain-Temperature Coefficient
Thermal Resistance (Junction to Ambient)
dB
dB
dB/°C
°C/W
UPC2708T
T06
MIN TYP MAX
20 26 33
13 15 18.5
2.7 2.9
±0.8
7.5 10
7.5
6.5 8
8 11
16 20
18 23
+0.002
200
UPC2711T
T06
MIN TYP MAX
9 12 15
11 13 16.5
2.7 2.9
±0.8
-2 1
-4
5 6.5
20 25
9 12
25 30
-0.002
200
California Eastern Laboratories


  NEC Electronic Components Datasheet  

UPC2708T Datasheet

3 GHz SILICON MMIC WIDE-BAND AMPLIFIER

No Preview Available !

UPC2708T pdf
UPC2708T, UPC2711T
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCC Supply Voltage
V6
PIN Input Power
dBm
+10
PT Power Dissipation2
mW 280
TOP Operating Temperature
°C -40 to +85
TSTG
Storage Temperature
°C -55 to +150
Notes:
1. Operation in excess of any one of these parameters may result in
permanent damage.
2. Mounted on 50 x 50 x 1.6 mm epoxy glass PWB (TA = +85°C).
RECOMMENDED
OPERATING CONDITIONS
SYMBOL
PARAMETER
UNITS
VCC Supply Voltage
V
MIN TYP MAX
4.5 5.0 5.5
TEST CIRCUIT
VCC
1000 pF
50
IN
C3
1000 nH
C1
1
6
4
L*
C2
1000 pF
2, 3, 5
1000 pF
50
OUT
TYPICAL PERFORMANCE CURVES (TA = 25°C)
CIRCUIT CURRENT vs. VOLTAGE
40
30
UPC2708T
20
10
UPC2711T
0
0
1 2345
Supply Voltage, VCC (V)
6
UPC2708T
GAIN AND NOISE FIGURE
vs. FREQUENCY AND VOLTAGE
20
9
VCC = 5.0 V
Gp VCC = 5.5 V
8
15
VCC = 4.5 V
VCC = 5.0 V
5.5 V
7
10
NF
4.5 V
6
5
5
0.1
0.3 1.0
Frequency, f (GHz)
3.0
* UPC2708T only
CIRCUIT CURRENT vs. TEMPERATURE
40
VCC = 5.0 V
35
30
UPC2708T
25
20
15
10
UPC2711T
5
0
-60 -40 -20 0 20 40 60 80 100
Operating Temperature, TOP (°C)
UPC2711T
GAIN AND NOISE FIGURE
vs. FREQUENCY AND VOLTAGE
20
VCC = 5.5 V
VCC = 5.0 V
15
8
Gp VCC = 4.5 V
10 7
5 VCC = 5.5 V
6
05
VCC = 4.5 V NF VCC = 5.0 V
-5
0.1
0.3 1.0
Frequency, f (GHz)
4
3.0


Part Number UPC2708T
Description 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER
Maker NEC
Total Page 6 Pages
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