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  NEC Electronic Components Datasheet  

UPD446 Datasheet

2K x 8-BIT STATIC CMOS RAM

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UPD446 pdf
NEe Microcomputers, Inc.
2048 x 8 BIT STATIC CMOS RAM
NEe
f'PD446
f'PD446-1
pPD446-2
~rn~[~~~ ~illrnW
DESC RIPTION
The IlPD446 is a high speed, low power, 2048 word by 8 bit static CMOS RAM
fabricated using an advanced silicon gate CMOS technology. A unique circuitry
technique makes the IlPD446 a very low operating power device which requires
no clock or refreshing to operate. Minimum standby power current is drawn by this
device when CE equals VCC independently of the other input levels.
Data retention is guaranteed at a power supply voltage as low as 2V.
The IlPD446 is packaged in a standard 24'pin dual-in-line package and is plug-in
compatible with 16K EPROMs.
FEATU RES
Single +5V Supply
• Fully Static Operation - No Clock or Refreshing required
• TTL Compatible - All Inputs and Outputs
• Common I/O Using Three-State Output
• OE Eliminates Need for External Bus Buffers
• Max Access/Min Cycle Times Down to 120 ns
• Low Power Dissipation, 45 mA Max Activel100 IlA Max Standby/
10 IlA Max Data Retention
• Data Retention Voltage - 2V Min
• Standard 24-Pin Plastic and Ceramic Packages
• Plug-in Compatible with 16K EPROMs
II
PIN ·CONFIGURATION
2
4
5
A2 6
Al
AD S
1/01 9
1102
IlPD
446
24 VCC
23 AS
22 A9
21 WE
20 OE
19 Al0
1B CE
17 1/08
16 1107
15 1106
14 1105
13 1104
PIN NAMES
AO-Al0
'WE
Address Inputs
Write Enable
DE
CE
1/01-I/OB
VCC
Output Enable
Chip Enable
Data InputlOutput
Power (+5V)
GND
Ground
TRUTH TABLE
CE OE WE
MODE
110
ICC
H X X NOT SELECTED HZ STANDBY
L
H
H ' ' NDT SELECTED
HZ
ACTIVE
L L H READ
DOUT ACTIVE
L X L WRITE.
DIN
ACTIVE
99


  NEC Electronic Components Datasheet  

UPD446 Datasheet

2K x 8-BIT STATIC CMOS RAM

No Preview Available !

UPD446 pdf
p.PD446
A4
AS
As
A7
As
A9
AI 0-"'-_"""
CELL ARRAY
128 ROWS
128 COLUMNS
I/~' _ _+_~" INPUT
SENSE SWITCH
: DATA r-~-----------f-,
t
CONTROL
COLUMN
1/08 - - + - . - I H
DECODER
OUTPUT
DATA
CONTROL
BLOCK DIAGRAM
WE~6J~->------------------------~
Supply Voltage ........................................... 7.0V
Input or Output Voltage Supplied . . . . . . . . . . . . . . . . . . . . . -0.3 to vee + O.3V
Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to· 125°C
Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . , ... oOe to70PC.
ABSOLUTE MAXIMUM
RATI NGS*
COMMENT: Stress above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational sections of .this sp~eifieatlon Is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability.
*TIi=25°e
Ta - 0 to 70"C; Vee" 5.0V:t 10%
CHARACTERISTIC SYMBOL
Input High Volt.
Input low Voltage
Input Leakage Current
I/O Leakage Current
V'H
VIL
ILl
ILO
Operating SuppJy.Current
letA1
1CCA2
Standby Current
OutpUt High Voltage
Output Low Voltegt
ICCS
VOH
VOL
,.,.,...TV. TV. TV.~!I""Z
"PD448-1
MIN MAX MIN MAX MIN
UNIT
MAX
2.2 Vee 2.2 Vee 2.' Vee V
<0" <0.3 +0.3
-0.3 0.8 -0.3 0.8 -0.3 0.8 V
-1.0 I.D -t.O I.D -1.0 1.0 .A
-1.0 I.D :-'.0 I.D -1.0 1.0 .A
30 ••
2. 38
20 3D mA
lD lD lD mA
100 100 100 .A
2.' 2.' 2.' V
D.' D•• D.' V
DC CHARACTERISTICS
CONDITIONS
VIN .. a-Vee
Ves" VIH
VI/O=O-VcC
YeS-VILII/O-O
MIN TCYCLE
Ves" VIL 11/0" 0
OCCURRENT
Yes-Vee
YIN-O-Vee
IO~--l.0mA
'OL ...2.0mA
PARAMETER
SYMBOL
Input Capacitance
elN
Input/Output Capacitance CI/O
LIMITS
MIN MAX UNIT
TEST
CONDITtONS
6 pF VIN =OV
8 pF VI/O = OV
CAPACITANCE
100


Part Number UPD446
Description 2K x 8-BIT STATIC CMOS RAM
Maker NEC
Total Page 6 Pages
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