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NIKO-SEM
NIKO-SEM

P0270ATF Datasheet Preview

P0270ATF Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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P0270ATF pdf
NIKO-SEM
N-Channel Enhancement Mode P0270ATF(S)
Field Effect Transistor
TO-220F:P0270ATF
TO-220FS:P0270ATFS
Halogen-Free & Lead-Free
D
PRODUCT SUMMARY
V(BR)DSS
700V
RDS(ON)
6.3Ω
ID
2A
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Energy3
TC = 25 °C
TC = 100 °C
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
EAS
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
±30
2
1
8
5
26
10
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
3VDD = 50V , L = 10mH, starting TJ = 25°C
TYPICAL
MAXIMUM
4.7
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
MIN TYP MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
700
2.5 3.8
4.5
V
VDS = 0V, VGS = ±30V
±100 nA
VDS = 700V, VGS = 0V
VDS = 560V, VGS = 0V, TJ = 125 °C
25
A
250
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 1A
VDS = 10V, ID = 1A
5.5 6.3
1.5
Ω
S
REV 2.1
1
D-16-5



NIKO-SEM
NIKO-SEM

P0270ATF Datasheet Preview

P0270ATF Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

P0270ATF pdf
NIKO-SEM
N-Channel Enhancement Mode P0270ATF(S)
Field Effect Transistor
TO-220F:P0270ATF
TO-220FS:P0270ATFS
Halogen-Free & Lead-Free
DYNAMIC
Input Capacitance
Ciss
333
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
42
Reverse Transfer Capacitance
Crss
11
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS =560V, VGS = 10V,
ID = 2A
Qgd
6.5
2
1.5
Turn-On Delay Time2
td(on)
30
Rise Time2
tr VDD = 350V,
80
Turn-Off Delay Time2
td(off)
ID 2A, VGS = 10V, RGS = 25Ω
50
Fall Time2
tf
70
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 2A, VGS = 0V
Reverse Recovery Time
trr
Is = 2A,
356
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
dIS/dt=100A/us
1.2
2
1.5
pF
nC
nS
A
V
nS
C
REV 2.1
2
D-16-5


Part Number P0270ATF
Description N-Channel Enhancement Mode Field Effect Transistor
Maker NIKO-SEM
Total Page 4 Pages
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