http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





NIKO-SEM
NIKO-SEM

P0465CD Datasheet Preview

P0465CD Datasheet

N-Channel Field Effect Transistor

No Preview Available !

P0465CD pdf
NIKO-SEM
N-Channel Enhancement Mode
P0465CD
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
650V
2.6Ω
ID
4A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1 , 2
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
650
±30
4
2.5
15
2
20
54
21
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
3VDD = 50V , L = 10mH ,starting TJ = 25˚C
TYPICAL
MAXIMUM
2.3
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±30V
VDS = 650V, VGS = 0V , TC = 25 °C
VDS = 520V, VGS = 0V , TC = 100 °C
650
2.5
V
3.3 4.5
±100 nA
1
A
10
REV1.0
E-09-2
1



NIKO-SEM
NIKO-SEM

P0465CD Datasheet Preview

P0465CD Datasheet

N-Channel Field Effect Transistor

No Preview Available !

P0465CD pdf
NIKO-SEM
N-Channel Enhancement Mode
P0465CD
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 2A
VDS = 15V, ID = 2A
DYNAMIC
2.1 2.6 Ω
2.5 S
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
512
52 pF
Reverse Transfer Capacitance
Crss
12
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDD = 520V, ID = 4A, VGS = 10V
VGS = 0V , VDD = 350V,
ID = 4A, RG= 25Ω
13
3.8 nC
4.3
27
59
nS
90
74
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF =4A, VGS = 0V
4A
1V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 4A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
374 nS
2.1 uC
REV1.0
E-09-2
2


Part Number P0465CD
Description N-Channel Field Effect Transistor
Maker NIKO-SEM
Total Page 4 Pages
PDF Download
P0465CD pdf
Download PDF File


Buy Electronic Components




Related Datasheet

1 P0465CD N-Channel Enhancement Mode MOSFET UNIKC
UNIKC
P0465CD pdf
2 P0465CD N-Channel Field Effect Transistor NIKO-SEM
NIKO-SEM
P0465CD pdf
3 P0465CI N-Channel Enhancement Mode MOSFET UNIKC
UNIKC
P0465CI pdf
4 P0465CIS N-Channel Enhancement Mode MOSFET UNIKC
UNIKC
P0465CIS pdf
5 P0465CS N-Channel Enhancement Mode MOSFET UNIKC
UNIKC
P0465CS pdf
6 P0465CT N-Channel Enhancement Mode MOSFET UNIKC
UNIKC
P0465CT pdf
7 P0465CTF N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM
NIKO-SEM
P0465CTF pdf
8 P0465CTF N-Channel Enhancement Mode MOSFET UNIKC
UNIKC
P0465CTF pdf
9 P0465CTFS N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM
NIKO-SEM
P0465CTFS pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components