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NIKO-SEM
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P0508AT Datasheet Preview

P0508AT Datasheet

N-Channel Field Effect Transistor

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P0508AT pdf
NIKO-SEM
N-Channel Enhancement Mode
P0508AT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
80V 5.5mΩ
ID
94A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
80
±25
94
60
270
96
460
113
45
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Package limitation current is 85A.
TYPICAL
MAXIMUM
1.1
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±25V
VDS = 64V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125 °C
LIMITS
MIN TYP MAX
UNITS
80
23
4
V
±100 nA
1
10 A
REV 1.0
1
F-52-4



NIKO-SEM
NIKO-SEM

P0508AT Datasheet Preview

P0508AT Datasheet

N-Channel Field Effect Transistor

No Preview Available !

P0508AT pdf
NIKO-SEM
N-Channel Enhancement Mode
P0508AT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 7V, ID = 20A
VGS = 10V, ID = 20A
VDS = 10V, ID = 20A
DYNAMIC
4.4 7
3.9 5.5
66
Input Capacitance
Ciss
3876
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
851
Reverse Transfer Capacitance
Crss
333
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.3
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=7V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS =40V,ID = 20A
VDD = 40V,
ID 20A, VGS = 10V, RGEN =6Ω
80
61.5
17
30
74
70
98
42
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 20A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dIs/dt= 100A/μs
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
60
103
80
1.4
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.0
2
F-52-4


Part Number P0508AT
Description N-Channel Field Effect Transistor
Maker NIKO-SEM
Total Page 4 Pages
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