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NTE123A Datasheet Preview

NTE123A Datasheet

Silicon Complementary Transistors General Purpose

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NTE123A pdf
NTE123A (NPN) & NTE159M (PNP)
Silicon Complementary Transistors
General Purpose
Description:
The NTE123A (NPN) and NTE159M (PNP) are widely used “Industry Standard” complementary transis-
tors in a TO18 type case designed for applications such as medium–speed switching and amplifiers from
audio to VHF frequencies.
Features:
D Low Collector Saturation Voltage: 1V (Max)
D High Current Gain–Bandwidth Product: fT = 300MHz (Min) @ IC 20mA
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO
NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector–Base Voltage, VCBO
NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter–Base Voltage, VEBO
NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC
NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA
NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4W
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.28mW/°C
Total Device Dissipation (TC = +25°C), PD
NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.85mW/°C
NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8W
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.3mW/°C
Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C



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NTE123A Datasheet Preview

NTE123A Datasheet

Silicon Complementary Transistors General Purpose

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NTE123A pdf
Electrical Characteristics: (TA = 25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
OFF Characteristics
CollectorEmitter Breakdown Voltage
NTE123A
NTE159M
V(BR)CEO
IC = 10mA, IB = 0
40
60
CollectorBase Breakdown Voltage
NTE123A
NTE159M
V(BR)CBO
IC = 10µA, IE = 0
75
60
EmitterBase Breakdown Voltage
NTE123A
NTE159M
V(BR)EBO
IE = 10µA, IC = 0
6––
5––
Collector Cutoff Current
NTE123A
ICEX
VCE = 60V, VEB(off) = 3V
10
NTE159M
Collector Cutoff Current
NTE123A
NTE159M
Emitter Cutoff Current (NTE123A Only)
Base Cutoff Current
NTE123A
NTE159M
ON Characteristics
ICBO
IEBO
IBL
VCE = 30V, VBE = 500mV
VCB = 60V, IE = 0
VCB = 60V, IE = 0, TA = +150°C
VCB = 50V, IE = 0
VCB = 50V, IE = 0, TA = +150°C
VEB = 3V, IC = 0
VCE = 60V, VEB(off) = 3V
VCE = 30V, VEB(off) = 500mV
– – 50
– – 0.01
– – 10
– – 0.01
– – 10
– – 10
– – 20
– – 50
DC Current Gain
NTE123A
hFE
VCE = 10V IC = 0.1mA, Note 1
35
IC = 1mA
50
IC = 10mA, Note 1
75
IC = 10mA, TA = 55°C 35
IC = 150mA, Note 1
100 300
VCE = 1V, IC = 150mA, Note 1
50
VCE = 10V IC = 500mA, Not e 1
40
NTE159M
IC = 0.1mA
75
IC = 1mA
100
IC = 10mA
100
IC = 150mA, Note 1
100 300
IC = 500mA, Note 1
50
CollectorEmitter Saturation Voltage
NTE123A
VCE(sat)
IC = 150mA, IB = 15mA, Note 1
– – 0.3
IC = 500mA, IB = 50mA, Note 1
– – 1.0
NTE159M
IC = 150mA, IB = 15mA, Note 1
– – 0.4
IC = 500mA, IB = 50mA, Note 1
– – 1.6
Unit
V
V
V
V
V
V
nA
nA
µA
µA
µA
µA
nA
nA
nA
V
V
V
V
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.


Part Number NTE123A
Description Silicon Complementary Transistors General Purpose
Maker NTE
Total Page 4 Pages
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