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NTE
NTE

NTE2527 Datasheet Preview

NTE2527 Datasheet

Silicon Complementary Transistors

No Preview Available !

NTE2527 pdf
NTE2526 (NPN) & NTE2527 (PNP)
Silicon Complementary Transistors
High Current Switch
TO251
Features:
D Low CollectorEmitter Saturation Voltage
D High Current and High fT
D Excellent Linearity of hFE
D Fast Switching Time
D TO251 Type Package
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current,
Continuous
IC. .
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4A
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Collector
TTAC
P=o+w2e5r°CDis.s.i.p.a.ti.o.n.,.P. C. .
= +25°C . . . . . . . . . . . .
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1W
20W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
GainBandwidth Product
NTE2526
NTE2527
ICBO
IEBO
hFE
fT
VCB = 100V, IE = 0
VEB = 4V, IC = 0
VCE = 5V, IC = 500mA
VCE = 5V, IC = 3A
VCE = 10V, IC = 500mA
Output Capacitance
NTE2527
Cob VCB = 10V, f = 1MHz
NTE2526
Min Typ Max Unit
− − 1.0 μA
− − 1.0 μA
140 400
40 − −
180 MHz
130 MHz
40 pF
65 pF
Rev. 810



NTE
NTE

NTE2527 Datasheet Preview

NTE2527 Datasheet

Silicon Complementary Transistors

No Preview Available !

NTE2527 pdf
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
CollectorEmitter Saturation Voltage
NTE2526
VCE(sat) IC = 2A, IB = 200mA
150 400 mV
NTE2527
200 500 mV
BaseEmitter Saturation Voltage
VBE(sat) IC = 2A, IB = 200mA
0.9 1.2 V
CollectorBase Breakdown Voltage
V(BR)CBO IC = 10μA, IE = 0
120
V
CollectorEmitter Breakdown Voltage
V(BR)CEO IC = 1mA, RBE =
100
V
EmitterBase Breakdown Voltage
V(BR)EBO IE = 10μA, IC = 0
6 − −V
TurnOn Time
Storage Time
NTE2526
ton
tstg
VP10CuIlCBs1e==W50i1dV0t,hIBV=2B=E20=ICμs=5,2VA,,
Duty Cycle 1%, Note 1
100 ns
900 ns
NTE2527
800 ns
Fall Time
tf
50 ns
Note 1. For NTE2527, the polarity is reversed.
.059 (1.5)
.256 (6.5)
.197 (5.0)
C
BC E
.090 (2.3)
.275
(7.0)
.295
(7.5)
.090 (2.3)
.002 (0.5)
.002(0.5)


Part Number NTE2527
Description Silicon Complementary Transistors
Maker NTE
Total Page 2 Pages
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