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NXP Semiconductors Electronic Components Datasheet

BC847DS Datasheet

100 mA NPN/NPN general-purpose transistor

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BC847DS pdf
BC847DS
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45 V, 100 mA NPN/NPN general-purpose transistor
Rev. 01 — 25 August 2009
Product data sheet
1. Product profile
1.1 General description
NPN/NPN general-purpose transistor pair in a small SOT457 (SC-74) Surface-Mounted
Device (SMD) plastic package.
1.2 Features
I Low collector capacitance
I Low collector-emitter saturation voltage
I Closely matched current gain
I Reduces number of components and board space
I No mutual interference between the transistors
I AEC-Q101 qualified
1.3 Applications
I General-purpose switching and amplification
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Per transistor
VCEO
IC
hFE
collector-emitter voltage open base
collector current
DC current gain
VCE = 5 V; IC = 2 mA
Min Typ Max Unit
- - 45 V
- - 100 mA
200 300 450


NXP Semiconductors Electronic Components Datasheet

BC847DS Datasheet

100 mA NPN/NPN general-purpose transistor

No Preview Available !

BC847DS pdf
NXP Semiconductors
BC847DSwww.DataSheet4U.com
45 V, 100 mA NPN/NPN general-purpose transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
Simplified outline Graphic symbol
654
654
123
TR2
TR1
123
sym020
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
BC847DS
SC-74 plastic surface-mounted package (TSOP6); 6 leads
Version
SOT457
4. Marking
Table 4. Marking codes
Type number
BC847DS
Marking code
ZL
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Per device
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
open emitter
open base
open collector
single pulse;
tp 1 ms
single pulse;
tp 1 ms
Tamb 25 °C
-
-
-
-
-
-
[1] -
Ptot total power dissipation Tamb 25 °C
[1] -
Max Unit
50 V
45 V
6V
100 mA
200 mA
200 mA
250 mW
380 mW
BC847DS_1
Product data sheet
Rev. 01 — 25 August 2009
© NXP B.V. 2009. All rights reserved.
2 of 12


Part Number BC847DS
Description 100 mA NPN/NPN general-purpose transistor
Maker NXP
Total Page 12 Pages
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