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BGU7003 Datasheet

Wideband Silicon Germanium Low-noise Amplifier MMIC

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BGU7003 pdf
BGU7003
Wideband silicon germanium low-noise amplifier MMIC
Rev. 02 — 22 June 2010
Product data sheet
1. Product profile
CAUTION
1.1 General description
The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for high speed,
low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT891
package.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
„ Low noise high gain microwave MMIC
„ Applicable between 40 MHz and 6 GHz
„ Integrated temperature stabilized bias for easy design
„ Bias current configurable with external resistor
„ Noise figure NF = 0.80 dB at 1.575 GHz
„ Insertion power gain = 18.3 dB at 1.575 GHz
„ 110 GHz transit frequency - SiGe:C technology
„ Power-down mode current consumption < 1 μA
„ Optimized performance at low 5 mA supply current
„ ESD protection > 1 kV Human Body Model (HBM) on all pins
1.3 Applications
„ GPS
„ Satellite radio
„ Low-noise amplifiers for microwave communications systems
„ WLAN and CDMA applications
„ Analog / digital cordless applications


NXP Semiconductors Electronic Components Datasheet

BGU7003 Datasheet

Wideband Silicon Germanium Low-noise Amplifier MMIC

No Preview Available !

BGU7003 pdf
NXP Semiconductors
BGU7003
Wideband silicon germanium low-noise amplifier MMIC
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; VENABLE 0.7 V; f = 1575 MHz; ZS = ZL = 50 Ω (input and output matched to
50 Ω) unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
VCC
ICC(tot)
Tamb
Ptot
|s21|2
NF
supply voltage
total supply current
ambient temperature
total power dissipation
Insertion power gain
noise figure
RF input AC coupled
configurable with external resistor
Tsp 103 °C
2.2 -
[1] 3
-
40 +25
[2] -
-
- 18.3
- 0.80
2.85 V
15 mA
+85 °C
70 mW
- dB
- dB
Pi(1dB)
IP3I
input power at 1 dB gain compression
input third-order intercept point
jammers at f1 = f + 138 MHz and
f2 = f + 276 MHz
- 20.1 -
- 0.2 -
dBm
dBm
[1] ICC(tot) = ICC + IRF_OUT + IR_BIAS.
[2] Tsp is the temperature at the solder point of the ground lead.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
R_BIAS
RF_IN
GND
RF_OUT
ENABLE
VCC
Simplified outline Graphic symbol
123
56
24
654
bottom view
13
sym128
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
Version
BGU7003
XSON6
plastic extremely thin small outline package; no leads; SOT891
6 terminals; body 1 × 1 × 0.5 mm
4. Marking
Table 4. Marking codes
Type number
BGU7003
Marking code
B3
BGU7003
Product data sheet
Rev. 02 — 22 June 2010
© NXP B.V. 2010. All rights reserved.
2 of 18


Part Number BGU7003
Description Wideband Silicon Germanium Low-noise Amplifier MMIC
Maker NXP
Total Page 18 Pages
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