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NXP Semiconductors Electronic Components Datasheet

BLF7G20LS-200 Datasheet

Power LDMOS transistor

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BLF7G20LS-200 pdf
BLF7G20L-200;
BLF7G20LS-200
Power LDMOS transistor
Rev. 01 — 3 June 2010
www.DataSheet4U.com
Objective data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from
1805 MHz to 1990 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
IDq
VDS PL(AV) Gp
ηD ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
1805 to 1880
1620 28 55
18 33 29[1]
[1] Test signal: 3GPP; test model 1; 64 PDPCH; PAR = 8.4 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
„ Excellent ruggedness
„ High efficiency
„ Low Rth providing excellent thermal stability
„ Designed for broadband operation (1805 MHz to 1990 MHz)
„ Lower output capacitance for improved performance in Doherty applications
„ Designed for low-memory effects providing excellent digital pre-distortion capability
„ Internally matched for ease of use
„ Integrated ESD protection
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
„ RF power amplifiers for W-CDMA base stations and multi-carrier applications in the
1805 MHz to 1990 MHz frequency range


NXP Semiconductors Electronic Components Datasheet

BLF7G20LS-200 Datasheet

Power LDMOS transistor

No Preview Available !

BLF7G20LS-200 pdf
NXP Semiconductors
www.DataSheet4U.com
BLF7G20L-200; BLF7G20LS-200
Power LDMOS transistor
2. Pinning information
Table 2. Pinning
Pin Description
BLF7G20L-200 (SOT502A)
1 drain
2 gate
3 source
BLF7G20LS-200 (SOT502B)
1 drain
2 gate
3 source
[1] Connected to flange
3. Ordering information
Simplified outline Graphic symbol
11
3
[1]
22
3
sym112
1
3
[1]
2
1
2
3
sym112
Table 3. Ordering information
Type number
Package
Name Description
BLF7G20L-200 -
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
BLF7G20LS-200 -
earless flanged LDMOST ceramic package; 2 leads
Version
SOT502A
SOT502B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
Tstg storage temperature
Tj junction temperature
Min Max Unit
- 65 V
0.5 +13 V
65 +150 °C
- 225 °C
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter
Rth(j-c) thermal resistance from junction to case
Conditions
Tcase = 80 °C; PL = 55 W;
VDS = 28 V; IDq = 1620 mA
Typ Unit
0.27 K/W
BLF7G20L-200_7G20LS-200
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 3 June 2010
© NXP B.V. 2010. All rights reserved.
2 of 13


Part Number BLF7G20LS-200
Description Power LDMOS transistor
Maker NXP
Total Page 13 Pages
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