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NXP Semiconductors Electronic Components Datasheet

J110 Datasheet

N-channel silicon junction FETs

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J110 pdf
DISCRETE SEMICONDUCTORS
DATA SHEET
J108; J109; J110
N-channel silicon junction FETs
Product specification
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
1996 Jul 30


NXP Semiconductors Electronic Components Datasheet

J110 Datasheet

N-channel silicon junction FETs

No Preview Available !

J110 pdf
Philips Semiconductors
N-channel silicon junction FETs
Product specification
J108; J109; J110
FEATURES
High speed switching
Interchangeability of drain and source connections
Low RDSon at zero gate voltage (<8 for J108).
APPLICATIONS
Analog switches
Choppers and commutators.
DESCRIPTION
N-channel symmetrical silicon junction field-effect
transistors in a TO-92 package.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PINNING - TO-92
PIN SYMBOL
1g
2s
3d
DESCRIPTION
gate
source
drain
1
handbook, halfpage2
3
g
MAM197
d
s
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
VGSoff
drain-source voltage
gate-source cut-off voltage
J108
J109
J110
IDSS drain current
J108
J109
J110
Ptot total power dissipation
CONDITIONS
ID = 1 µA; VDS = 5 V
VGS = 0; VDS = 5 V
up to Tamb = 50 °C
MIN. MAX. UNIT
− ±25 V
3 10
2 6
0.5 4
V
V
V
80
mA
40
mA
10
mA
400 mW
1996 Jul 30
2


Part Number J110
Description N-channel silicon junction FETs
Maker NXP
Total Page 7 Pages
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