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NXP Semiconductors Electronic Components Datasheet

J174 Datasheet

P-channel silicon field-effect transistors

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J174 pdf
DISCRETE SEMICONDUCTORS
DATA SHEET
J174; J175;
J176; J177
P-channel silicon field-effect
transistors
Product specification
File under Discrete Semiconductors, SC07
April 1995


NXP Semiconductors Electronic Components Datasheet

J174 Datasheet

P-channel silicon field-effect transistors

No Preview Available !

J174 pdf
Philips Semiconductors
P-channel silicon field-effect transistors
Product specification
J174; J175;
J176; J177
DESCRIPTION
Silicon symmetrical p-channel
junction FETs in a plastic TO-92
envelope and intended for application
with analog switches, choppers,
commutators etc.
A special feature is the
interchangeability of the drain and
source connections.
PINNING
1 = source
2 = gate
3 = drain
Note: Drain and source are
interchangeable.
handbook, half1pa2ge
3
g
MAM388
d
s
Fig.1 Simplified outline and symbol, TO-92.
QUICK REFERENCE DATA
Drain-source voltage
Gate-source voltage
Gate current
Total power dissipation
up to Tamb = 50 °C
Drain current
VDS = 15 V; VGS = 0
Drain-source ON-resistance
VDS = 0.1 V; VGS = 0
± VDS
VGSO
IG
max.
max.
max.
30
30
50
V
V
mA
Ptot
IDSS
max.
min.
max.
400
J174
20
135
J175
7
70
J176
2
35
mW
J177
1.5 mA
20 mA
RDS on max.
85
125
250
300
April 1995
2


Part Number J174
Description P-channel silicon field-effect transistors
Maker NXP
Total Page 6 Pages
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