NPN silicon planar epitaxial microwave
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
• Interdigitated structure provides
high emitter efficiency
• Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance
• Internal input prematching ensures
good stability and allows an easier
design of wideband circuits.
NPN silicon planar epitaxial
microwave power transistor in a
SOT437A glued cap metal ceramic
flange package, with emitter
connected to flange.
Intended for use in common emitter,
class AB power amplifiers in CW
conditions for professional
applications at 1.85 GHz.
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common emitter class AB
class AB (CW)
f VCE ICQ PL1 Gpo
(GHz) (V) (A) (W) (dB)
1.85 24 0.1
see Figs 8
PINNING - SOT437A
3 emitter connected to ﬂange
Fig.1 Simplified outline and symbol.
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.