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PBLS2022D
20 V, 1.8 A PNP BISS loadswitch
Rev. 01 — 25 June 2009
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)
plastic package.
1.2 Features
I Low VCEsat (BISS) and resistor-equipped transistor in one package
I Low threshold voltage (<1 V) compared to MOSFET
I Space-saving solution
I Reduction of component count
I AEC-Q101 qualified
1.3 Applications
I Supply line switches
I Battery charger switches
I High-side switches for LEDs, drivers and backlights
I Portable equipment
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
TR1; PNP low VCEsat transistor
VCEO
collector-emitter voltage open base
IC collector current
ICM
peak collector current
single pulse;
tp ≤ 1 ms
RCEsat
collector-emitter saturation IC = −1.8 A;
resistance
IB = −100 mA
TR2; NPN resistor-equipped transistor
-
-
-
[1] -
- −20 V
- −1.8 A
- −3 A
78 117 mΩ
VCEO
IO
R1
collector-emitter voltage
output current
bias resistor 1 (input)
open base
- - 50 V
- - 100 mA
3.3 4.7 6.1 kΩ
R2/R1
bias resistor ratio
0.8 1
1.2
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
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