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NXP Semiconductors Electronic Components Datasheet

PIP3115-B Datasheet

LOGIC LEVEL TOPFET

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PIP3115-B pdf
Philips Semiconductors
Logic level TOPFET
Product specification
PIP3115-B
DESCRIPTION
Monolithic temperature and
overload protected logic level power
MOSFET in TOPFET2 technology
assembled in a 3 pin surface mount
plastic package.
APPLICATIONS
General purpose switch for driving
lamps
motors
solenoids
heaters
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
PD
Tj
RDS(ON)
Continuous drain source voltage
Continuous drain current
Total power dissipation
Continuous junction temperature
Drain-source on-state resistance
IISL
Input supply current
VIS = 5 V
FEATURES
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TrenchMOS output stage
Current limiting
Overload protection
Overtemperature protection
Protection latched reset by input
5 V logic compatible input level
Control of output stage and
supply of overload protection
circuits derived from input
Low operating input current
permits direct drive by
micro-controller
ESD protection on all pins
Overvoltage clamping for turn
off of inductive loads
FUNCTIONAL BLOCK DIAGRAM
INPUT
O/V
CLAMP
RIG
LOGIC AND
PROTECTION
MAX.
50
8
40
150
100
650
UNIT
V
A
W
˚C
m
µA
DRAIN
POWER
MOSFET
PINNING - SOT404
PIN DESCRIPTION
1 input
2 drain
3 source
mb drain
SOURCE
Fig.1. Elements of the TOPFET.
PIN CONFIGURATION
SYMBOL
mb D
TOPFET
2
13
I
P
S
May 2001 1 Rev 1.000


NXP Semiconductors Electronic Components Datasheet

PIP3115-B Datasheet

LOGIC LEVEL TOPFET

No Preview Available !

PIP3115-B pdf
Philips Semiconductors
Logic level TOPFET
Product specification
PIP3115-B
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
VDS Continuous drain source voltage1
ID Continuous drain current
CONDITIONS
-
VIS = 5 V; Tmb = 25 ˚C
MIN.
-
-
ID Continuous drain current
VIS = 5 V; Tmb 110 ˚C
II Continuous input current
-
IIRM Non-repetitive peak input current tp 1 ms
PD Total power dissipation
Tmb 25 ˚C
Tstg Storage temperature
-
Tj
Continuous junction temperature2
normal operation
Tsold Case temperature
during soldering
-
-5
-10
-
-55
-
-
ESD LIMITING VALUE
SYMBOL PARAMETER
VC Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 k
MIN.
-
MAX.
50
self -
limited
8
5
10
40
175
150
260
MAX.
2
UNIT
V
A
A
mA
mA
W
˚C
˚C
˚C
UNIT
kV
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
EDSM
EDRM
Inductive load turn-off
Non-repetitive clamping energy
Repetitive clamping energy
IDM = 8 A; VDD 20 V
Tmb 25 ˚C
Tmb 95 ˚C; f = 250 Hz
- 100 mJ
- 20 mJ
OVERLOAD PROTECTION LIMITING VALUE
With an adequate protection supply provided via the input pin, TOPFET can protect itself from two types of overload
- overtemperature and short circuit load.
SYMBOL PARAMETER
REQUIRED CONDITION
MIN. MAX. UNIT
VDS Drain source voltage3
4 V VIS 5.5 V
0 35 V
THERMAL CHARACTERISTIC
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance
Junction to mounting base
Junction to ambient
CONDITIONS
-
minimum footprint FR4 PCB
MIN. TYP. MAX. UNIT
- 2.5 3.1 K/W
- 50 - K/W
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch.
3 All control logic and protection functions are disabled during conduction of the source drain diode.
May 2001 2 Rev 1.000


Part Number PIP3115-B
Description LOGIC LEVEL TOPFET
Maker NXP
Total Page 6 Pages
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