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NXP Semiconductors Electronic Components Datasheet

BUK964R4-40B Datasheet

TrenchMOS logic level FET

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BUK95/96/9E4R4-40B
TrenchMOS™ logic level FET
Rev. 02 — 13 October 2003
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
1.2 Features
s Very low on-state resistance
s 175 °C rated
s Q101 compliant
s Logic level compatible.
1.3 Applications
s Automotive systems
s Motors, lamps and solenoids
s 12 V loads
s General purpose power switching.
1.4 Quick reference data
s EDS(AL)S 961 mJ
s ID 75 A
s RDSon = 3.9 m(typ)
s Ptot 254 W.
2. Pinning information
Table 1: Pinning - SOT78, SOT404, and SOT226 simplified outlines and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
[1] mb
mb
3 source (s)
mb mounting base,
connected to
drain (d)
mb
Symbol
d
g
MBB076
s
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
123
MBK112
SOT404 (D2-PAK)
SOT226 (I2-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 package.


NXP Semiconductors Electronic Components Datasheet

BUK964R4-40B Datasheet

TrenchMOS logic level FET

No Preview Available !

BUK964R4-40B pdf
Philips Semiconductors
www.DataSheet4U.com
BUK95/96/9E4R4-40B
TrenchMOS™ logic level FET
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
Description
BUK954R4-40B TO-220AB Plastic single-ended heat-sink mounted package
BUK964R4-40B
D2-PAK
Plastic single-ended surface mounted package
BUK9E4R4-40B I2-PAK
Plastic single-ended low-profile package
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
RGS = 20 k
Tmb = 25 °C; VGS = 5 V;
Figure 2 and 3
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
IDR reverse drain current (DC)
Tmb = 100 °C; VGS = 5 V; Figure 2
Tmb = 25 °C; pulsed; tp 10 µs;
Figure 3
Tmb = 25 °C; Figure 1
Tmb = 25 °C
IDRM
peak reverse drain current
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source avalanche
energy
Tmb = 25 °C; pulsed; tp 10 µs
unclamped inductive load; ID = 75 A;
VDS 40 V; VGS = 5 V; RGS = 50 ;
starting Tmb = 25 °C
[1] Current is limited by power dissipation chip rating
[2] Continuous current is limited by package.
Min
-
-
-
[1] -
[2] -
[2] -
-
-
55
55
[1] -
[2] -
-
-
Version
SOT78
SOT404
SOT226
Max Unit
40 V
40 V
±15 V
174 A
75 A
75 A
697 A
254
+175
+175
W
°C
°C
174 A
75 A
697 A
961 mJ
9397 750 12051
Product data
Rev. 02 — 13 October 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
2 of 16


Part Number BUK964R4-40B
Description TrenchMOS logic level FET
Maker NXP Semiconductors
Total Page 16 Pages
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