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NXP Semiconductors Electronic Components Datasheet

PSMN003-30B Datasheet

N-channel enhancement mode field-effect transistor

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PSMN003-30P; PSMN003-30B
N-channel enhancement mode field-effect transistor
Rev. 01 — 23 October 2001
Product data
1. Description
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PSMN003-30P in SOT78 (TO-220AB)
PSMN003-30B in SOT404 (D2-PAK)
2. Features
s Low on-state resistance
s Fast switching.
3. Applications
s High frequency computer motherboard DC to DC converters
s OR-ing applications.
4. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT78 and SOT404, simplified outline and symbol
Description
Simplified outline
gate (g)
drain (d)
[1]
mb
mb
source (s)
drain (d)
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
SOT404 (D2-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
Symbol
g
MBB076
d
s
1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.


NXP Semiconductors Electronic Components Datasheet

PSMN003-30B Datasheet

N-channel enhancement mode field-effect transistor

No Preview Available !

PSMN003-30B pdf
Philips Semiconductors
www.DataSheet4U.com
PSMN003-30 series
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
Tj = 25 to 175 °C
Tmb = 25 °C; VGS = 10 V
Tmb = 25 °C
VGS = 10 V; ID = 25 A; Tj = 25 °C
VGS = 5 V; ID = 25 A; Tj = 25 °C
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
VGSM
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
gate-source voltage
ID drain current (DC)
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj operating junction temperature
Source-drain diode
Tj = 25 to 175 °C
Tj = 25 to 175 °C; RGS = 20 k
tp 50 µs; pulsed;
duty cycle 25 %; Tj 150 °C
Tmb = 25 °C; VGS = 10 V; Figure 2 and 3
Tmb = 100 °C; VGS = 10 V; Figure 2
Tmb = 25 °C; pulsed; tp 10 µs; Figure 3
Tmb = 25 °C; Figure 1
IS source (diode forward) current (DC) Tmb = 25 °C
ISM peak source (diode forward) current Tmb = 25 °C; pulsed; tp 10 µs
Avalanche ruggedness
EAS non-repetitive avalanche energy unclamped inductive load;
ID = 75 A; tp = 0.1 ms; VDD = 15 V;
RGS = 50 ; VGS = 10 V; starting Tj = 25 °C
IAS non-repetitive avalanche current unclamped inductive load;
VDD = 15 V; RGS = 50 ; VGS = 10 V;
starting Tj = 25 °C
Typ Max Unit
30 V
75 A
230 W
175 °C
2.4 2.8 m
3.3 4
m
Min Max Unit
30 V
30 V
− ±20 V
− ±25 V
75 A
75 A
400 A
230 W
55 +175 °C
55 +175 °C
75 A
400 A
500 mJ
75 A
9397 750 08316
Product data
Rev. 01 — 23 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
2 of 13


Part Number PSMN003-30B
Description N-channel enhancement mode field-effect transistor
Maker NXP Semiconductors
Total Page 13 Pages
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