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NXP Semiconductors Electronic Components Datasheet

PSMN015-110P Datasheet

TrenchMOS Standard level FET

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PSMN015-110P
TrenchMOS™ Standard level FET
Rev. 01 — 08 January 2004
Product data
1. Product profile
1.1 Description
SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve
the lowest possible on-state resistance in each package.
1.2 Features
s Low on-state resistance
s Low gate charge.
1.3 Applications
s DC-to-DC converters
s Switched-mode power supplies.
1.4 Quick reference data
s VDS 110 V
s Ptot 300 W
s ID 75 A
s RDSon 15 m
2. Pinning information
Table 1: Pinning - SOT78, simplified outlines and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
mb
3 source (s)
mb mounting base;
connected to drain (d)
Symbol
d
g
MBB076
s
MBK106
123
SOT78 (TO-220AB)


NXP Semiconductors Electronic Components Datasheet

PSMN015-110P Datasheet

TrenchMOS Standard level FET

No Preview Available !

PSMN015-110P pdf
www.DataSheet4U.com
Philips Semiconductors
PSMN015-110P
TrenchMOS™ Standard level FET
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
Description
Version
PSMN015-110P TO-220AB Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads SOT78
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
25 °C Tj 175 °C
25 °C Tj 175 °C; RGS = 20 k
Tmb = 25 °C; VGS = 10 V; Figure 2 and 3
Tmb = 100 °C; VGS = 10 V; Figure 2
Tmb = 25 °C; pulsed; tp 10 µs; Figure 3
Tmb = 25 °C; Figure 1
IS source (diode forward) current (DC) Tmb = 25 °C
ISM peak source (diode forward) current Tmb = 25 °C; pulsed; tp 10 µs
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 36 A;
tp = 0.11 ms; VDD 50 V; RGS = 50 ;
VGS = 10 V; starting Tj = 25 °C
Min Max Unit
- 110 V
- 110 V
- ±20 V
- 75 A
- 60.8 A
- 240 A
- 300 W
55 +175 °C
55 +175 °C
- 75 A
- 240 A
- 320 mJ
9397 750 12544
Product data
Rev. 01 — 08 January 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
2 of 12


Part Number PSMN015-110P
Description TrenchMOS Standard level FET
Maker NXP Semiconductors
Total Page 12 Pages
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