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N32T1630C1C Datasheet Preview

N32T1630C1C Datasheet

32Mb Ultra-Low Power Asynchronous CMOS Pseudo SRAM

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N32T1630C1C pdf
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NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N32T1630C1C
32Mb Ultra-Low Power Asynchronous CMOS Pseudo SRAM
w/ Page Mode Operation (2M x 16 bit)
Overview
Features
The N32T1630C1C is an integrated memory
device containing a 32 Mbit SRAM built using a
self-refresh DRAM array organized as 2,097,152
words by 16 bits. The device is designed and
fabricated using NanoAmp’s advanced CMOS
technology to provide both high-speed
performance and ultra-low power. It is designed to
be identical in operation and interface to standard
6T SRAMS. Byte controls (UB and LB) allow the
upper and lower bytes to be accessed
independently and can also be used to deselect
the device. The N32T1630C1C offers a very high
speed page mode operation for improved
performance and operating power savings. The
device is optimal for various applications where
low-power is critical such as battery backup and
hand-held devices. Also included are several
power savings modes: a deep sleep mode and
partial array refresh mode where data is retained in
a portion of the array. The device can operate over
a very wide temperature range of -25oC to +85oC
and is available in a JEDEC standard VFRBGA
package compatible with other standard 2Mb x 16
SRAMs.
• Dual voltage for Optimum Performance:
VccQ - 2.7 to 3.6 Volts
Vcc - 2.7 to 3.6 Volts (Vcc VccQ)
• Fast random access time
70ns at 2.7V
• Very fast page mode access time
25ns page cycle and access
• Very low standby current
80µA V (Typical)
• Very low operating current
1.0mA at 1µs (Typical)
• Simple memory control
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Automatic power down to standby mode
• PAR and RMS power saving modes
• Deep sleep option
• TTL compatible three-state output driver
Product Family
Part Number
Package
Type
Operating
Temperature
N32T1630C1CZ 48-VFRBGA -25oC to +85oC
Power
Supply
2.7V - 3.6V (VCC)
Speed
Standby
Operating
Current (ISB), Current (Icc),
Max Max
70ns 135 µA @ 3.3V 3 mA @ 1MHz
Pin Configuration (Top View)
Pin Descriptions
123456
A LB OE A0
B I/O8 UB A3
C I/O9 I/O10 A5
A1 A2 ZZ
A4 CE I/O0
A6 I/O1 I/O2
D VSSQ I/O11 A17 A7 I/O3 VCC
E VCCQ
I/O12
DNU/
VSS
A16
I/O4
VSS
F I/O14 I/O13 A14 A15 I/O5 I/O6
G I/O15 A19 A12 A13 WE I/O7
H A18 A8
A9 A10 A11 A20
48 Ball VFRBGA
6 x 8 mm
Pin Name
A0-A20
WE
CE
OE
UB,LB
ZZ
I/O0-I/O15
VCC
VCCQ
VSS
VSSQ
DNU
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Byte Enable Inputs
Deep Sleep Input
Data Inputs/Outputs
Core Power
I/O Power
Ground
I/O Ground
Do Not Use
(DOC# 14-02-005 Rev C ECN 01-0918)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1



NanoAmp Solutions
NanoAmp Solutions

N32T1630C1C Datasheet Preview

N32T1630C1C Datasheet

32Mb Ultra-Low Power Asynchronous CMOS Pseudo SRAM

No Preview Available !

N32T1630C1C pdf
NanoAmp Solutions, Inc.
Functional Block Diagram
N32T1630C1C
Word
Address
Inputs
A0 - A3
Page
Address
Inputs
A4 - A20
Word
Address
Decode
Logic
Page
Address
Decode
Logic
128K page
x 16 word
x 16 bit
RAM Array
Input/
Output
Mux
and
Buffers
I/O0 - I/O7
I/O8 - I/O15
CE
ZZ Control
WE Logic
OE
UB
LB
Functional Description
CE ZZ WE OE UB LB
I/O0 - I/O151
MODE
POWER
HHXXXX
XHXXHH
L H L X3 L1 L1
L H H L L1 L1
LHHHL L
XLXXXX
High Z
High Z
Data In
Data Out
High Z
High Z
Standby2
Standby2
Write
Read
Active
Deep Sleep
Standby
Standby
Active
Active
Active
Deep Sleep
1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7
are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown.
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally
isolated from any external influence and disabled from exerting any influence externally.
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance1
Item
Symbol
Test Condition
Input Capacitance
I/O Capacitance
CIN VIN = 0V, f = 1 MHz, TA = 25oC
CI/O VIN = 0V, f = 1 MHz, TA = 25oC
1. These parameters are verified in device characterization and are not 100% tested
Min Max Unit
6 pF
8 pF
(DOC# 14-02-005 Rev C ECN 01-0918)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2


Part Number N32T1630C1C
Description 32Mb Ultra-Low Power Asynchronous CMOS Pseudo SRAM
Maker NanoAmp Solutions
Total Page 15 Pages
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N32T1630C1C pdf
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