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New Jersey Semiconductor
New Jersey Semiconductor

2N6771 Datasheet Preview

2N6771 Datasheet

Silicon NPN Power Transistors

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2N6771 pdf
<3s.mi-L.onau.ctoi iJ~*
ma.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistors
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N6771/6772/6773
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= SOOV(Min)- 2N6771
= 350V(Min)- 2N6772
= 400V(Min)- 2N6773
• High Switching Speed
• Low Saturation Voltage
APPLICATIONS
• Designed for use in off-line power supplies and is also well
suited for use in a wide range of inverter or converter circuits
and pulse-width-modulated regulators.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE UNIT
2N6771
VCEV
Collector-Emitter Voltage
VBE=-1.5V
2N6772
2N6773
450
550
650
V
2N6771
300
VcEO(SUS) Collector-Emitter Voltage 2N6772
350
V
2N6773
400
VEBO Emitter-Base Voltage
8V
Ic Collector Current-Continuous
8A
ICM Collector Current-Peak
10 A
IB Base Current-Continuous
4A
PC Collector Power Dissipation@Tc=25°C 150
W
Tj Junction Temperature
Tstg Storage Temperature
200
-65-200
"C
°c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX
1.17
UNIT
'C/W
3. PIN 1.BASE
2. EMITTER
3. COLLECT OR (CASE)
TO-3 package
2
^
i
i_
I
C
It E
!
-JU-D *PL
GB
/ ri/CN""\-9—< t f
5 c; B
f \^: ^S' J
M3S
mm
DM DM MAX
A 39 90
B 25.30 26.S7
C 780 8.30
D 090 1.10
E 140 1.60
G 10.9?
H 548
K 1140 13.50
L 1675 17XB
N 1S.40 19.82
Q 4.00 4.20
U 3000 J02Q
£ 430 4.50
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors



New Jersey Semiconductor
New Jersey Semiconductor

2N6771 Datasheet Preview

2N6771 Datasheet

Silicon NPN Power Transistors

No Preview Available !

2N6771 pdf
Silicon NPN Power Transistors
2N6771/6772/6773
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N6771
Collector-Emitter
VcEO(SUS) Sustaining Voltage
2N6772
lc= 200mA ; IB= 0
2N6773
VcE(sat)-1 Collector-Emitter Saturation Voltage
lc= 5A; IB= 1A
lc=5A;lB=1A,Tc= 125'C
VcE(sat)-2 Collector-Emitter Saturation Voltage lc= 8A; IB= 4A
VBE(sat) Base-Emitter SaturationVoltage
Collector
ICEV Cutoff Current
2N6771
2N6772
2N6773
IEBO Emitter Cutoff Current
lc= 5A; IB= 1A
VCE=450V;VBE=-1.5V
VCE= 450V;VBE= -1.5V,TC= 125'C
VCE= 550V;VBE= -1.5V
VCE= 550V;VBE= -1.5V,TC= 125'C
VCE=650V;VBE=-1-5V
Vce= 650V;VBE= -1.5V,TC= 125'C
VEB= 8V; lc=0
UPS DC Current Gain
lc= 5A ; VC6= 3V
COB Output Capacitance
lE=0;VCB=10V;fteSt=1MHz
fr
Current-Gain—Bandwidth Product
lc=0.2A;VCE=10V
Switching Times
td Delay Time
tr Rise Time
'stg Storage Time
tf Fall Time
1C 5A, IB1 -IB2- TA
MIN TYP. MAX UNIT
300
350 V
400
1.0
2.0
V
2.0 V
1.6 V
0.1
1.0
0.1
1.0
mA
0.1
1.0
2.0 mA
10 40
50 300 PF
15 60 MHz
0.1 u s
0.5 u s
2.5 u s
0.4 u s


Part Number 2N6771
Description Silicon NPN Power Transistors
Maker New Jersey Semiconductor
Total Page 2 Pages
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