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New Jersey Semiconductor
New Jersey Semiconductor

SC261M Datasheet Preview

SC261M Datasheet

Triacs

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SC261M pdf
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Triacs
Bidirectional Triode Thyristors
.,. designed primarily for industrial and military applications for the control of ac
loads in applications such as light dimmers, power supplies, heating controls,
motor controls, welding equipment and power switching systems;
• All Diffused and Glass Passivated Junctions for Greater Stability
• Pressfit, Stud andIsolated Stud Packages
• Gate Triggering Guaranteed In All 3 Quadrants
SC260
SC260( )3
SC261
TRIACs
26 AMPERES RMS
200 thru 600 VOLTS
MAXIMUM RATINGS
Rating
Repetitive Peak Off-State Voltage
(TC = -we to + 115*0
SC260B, SC260B3, SC261B
SC260D, SC260D3, SC261D
SC260M, SC260M3, SC261M
RMS On-State Current
Peak Non-Repetitive Surge Current
(One Cycle. 60 Hz)
Circuit Fusing Considerations
t = 1 ms
t = 8.3 ms
Peak Gate Power (Pulse Width = 10 MS)
Average Gate Power
Peak Gate Power
Operating Junction Temperature Range
Storage Temperature Range
Stud Torque
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
SC260, SC261
SC260I )3
Symbol
VDRM
'T(RMS)
ITEM
Value
200
400
600
25
250
|2t
PGM
PG(AV)
IGM
Tj
Tstg
150
260
10
0.5
2
-40 to +116
-40 to +125
30
Symbol
Rfljc
Max
1.8
1.95
Unit
Volts
Amps
Amps
A26
Watts
Watt
Amps
°C
°C
In. Ib.
Unit
•c/w
SC260
SC261
SC260( 13
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductorsencourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors



New Jersey Semiconductor
New Jersey Semiconductor

SC261M Datasheet Preview

SC261M Datasheet

Triacs

No Preview Available !

SC261M pdf
SC260( )3 • SC261
ELECTRICAL CHARACTERISTICS (Tc = + 25°C unless otherwise noted. Values apply for eithar polarity of Main Terminal 2
Characteristics referenced to Main Terminal 1.)
Characteristic
Symbol
Mln Typ Max Unit
Peak Forward or Reverse Blocking Current
(Rated VDRM or VRRM. gate open) TC - 25°C
TC = +115°C
'DRM- !RRM
- - 10 ^A
1 mA
Peak On-Stata Voltage
HTM = 35 A Peak, Pulse Width = 1 ms, Duty Cycle «; 2%)
VTM
~ 1.58 Volts
Critical Rate of Rise of Off-State Voltage
(Rated VDRM- Gate Open-Circuited,
Exponential Waveform)
TC=+HB°C
dv/dt
60 ~ ~~ V//is
Critical Rate-of-Rlse of Commutating Off-State Voltage
('T(RMS) ~ Rated RMS On-StateCurrent)
(VDRM - Rated Peak Off-State Voltage,
Gate Open-Circuited, Commutating di/dt - 13.5 A/msl
TC -
+BO°C
dv/dt(c)
5
V/MS
DC Gate Trigger Current (Continuous dc)
<VD - 12 Vdc)
MT2I+), G( + ); MT2(-|, G(-); RL - 100 Ohms
MT2I +), G(-); RL = 50 Ohms
DC Gate Trigger Current (Continuous dc)
(VD = 12 Vdc)
MT2H-), G( +); MT2(-), G(-); RL = 50 Ohms
MT2I+), G(-); RL - 26 Ohms
TC = -40'C
"GT mAdc
- - 50
50
IGT mAdc
- - 80
80
DC Gate Trigger Voltage (Continuous dc) (VD = 12 VdcJ
MT2( + ), G( + ); MT2(-), G(-); RL = 100 Ohms
MT2I +), G(-); RL - 50Ohms
VGT _ Vdc
- 2.5
2.5
DC Gate Trigger Voltage (Continuous dc)
(VD - 12 Vdc)
MT2H-), G( + ); MT2(-|, G(-); RL = 60 Ohms
MT2(+), G(-); RL- 25 Ohms
TC = —40°C
VGT Vdc
- - 3.5
3.5
DC Gate Non-Trigger Voltage
(VD = Rated VDRM. RL • IK Ohms,
All Trigger Modes)
TC = 11B'C
VGD
0.25 " ~ Vdc
Holding Current
(VD = 24 Vdc, Peak Initiating Current = 0.5 A,
Pulse Width - 0.1 to 10ms. Gate Trigger
Source = 7 V, 20 Ohms)
TC = +25"C
TC - -40'C
IH mAdc
75
100
Latching Current
IL mAdc
(VD - 24 Vdc, Gate Trigger Source = 15V, 100 Ohms,
Pulse Width = 50 /»s, S fiS Maximum Rise and Fall Times)
MT2( + ), G( + ); MT2(-), G(-)
TC = 25°C
100
MT2( +), G(-)
TC - 25°C
- - 200
MT2I +), G( + ): MT2(-), G(-)
TC = -40'C
200
MT2I +), G(-)
TC = -40°C
400
FIGURE 1 -CURRENT DERATING
N"x,s>,-^
K LLWA E
«EWAV
OFtBAtl IN
M5xv.
SSHT ANOS
<? S,
FIGURE 2 - MAXIMUM ON-STATE POWER DISSIPATION
/
S
./
S
//
s / /r
Ij -It5«
ISOU TEDS!
^ Xk.
* ^ ^"
\(AV). AVERAGE FOWUt DISSIPATION (WATTSI
^
fULLWAVE
Sll EWAV E
OP ERATIlK
jX* ^
S 10 l& 20 Vt
b ID II 10
IIIRMSI. RMS ON-STATE CURRENT (AMP)
ITIRMSI, "us ONJTUTE CURRENT uw)


Part Number SC261M
Description Triacs
Maker New Jersey Semiconductor
Total Page 2 Pages
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SC261M pdf
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